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InAs room temperature photovoltaic infrared detectorPVA-3-d1.2-SMD-pAl2O3-115
PVA-3-d1.2-SMD-pAl2O3-115 is a room-temperature IR photovoltaic detector based on InAs heterostructure. It enables the detection of radiation in the range from 1.3 μm to 3.6 μm. The detector has a surface-mount design allowing for easy integration into electronic systems and making it more practical for many applications. The planar sapphire window protects against mechanical damage and environmental influences. This detector is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Features
Spectral range: 1.3 to 3.6 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Active area diameter, dA | 1.2 mm |
| Immersion | no |
| Cooling | no |
| Package | SMD |
| Acceptance angle, Φ | ≥115 deg. |
| Window | pAl2O3 (planar sapphire) |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip = Tamb | 293 K |
| Cut-on wavelength, λcut-on (10%) | 1.3 μm |
| Peak wavelength, λpeak | 2.9 μm |
| Cut-off wavelength, λcut-off (10%) | 3.6 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 5.0×109 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.6 A/W |
| Time constant, τ | 35 ns |
| Resistance, R | 85 Ω |
Spectral response
(Typ., Tchip = 293 K)
Mechanical layout
(Unit: mm)
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Application notes
Temperature sensor characteristics
Related files
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