home-icon/Products / Infrared detectors / InAs and InAsSb detectors / InAs photovoltaic IR detector PVA-3-d1.2-SMD-pAl2O3-115

InAs room temperature photovoltaic infrared detectorPVA-3-d1.2-SMD-pAl2O3-115

PVA-3-d1.2-SMD-pAl2O3-115 is an uncooled photovoltaic IR detector based on InAs heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 1.3 μm to 3.6 μm. The diameter (dA) of its active element is 1.2 mm. The detector is available in the SMD package with a planar sapphire window (pAl2O3).


Spectral range: 1.3 to 3.6 µm

Front-side illuminated

RoHS-compliant III-V material

High ambient operating and storage temperature

Compact, surface mount type ceramic package

Compatible with lead-free solder reflow

No minimum order quantity required


Gas detection, monitoring and analysis: H2O, HF, CH4, C2H2, C2H4, C2H6, NH3

Combustion process control

Green energy

Medical laser control

Detector configuration

Detector symbol PVA-3-d1.2-SMD-pAl2O3-115
Detector type photovoltaic
Active element material epitaxial InAs heterostructure
Cooling no
Temperature sensor n/n
Active area diameter, dA 1.2 mm
Immersion no
Package SMD
Acceptance angle, Φ ≥115 deg.
Window pAl2O3 (planar sapphire)


(Tamb = Tchip = 293 K, Vb = 0 V)

Parameter Value Unit
Min. Typ. Max.
Cut-on wavelength, λcut-on (10%) 1.3 μm
Peak wavelength, λpeak 2.9 μm
Cut-off wavelength, λcut-off (10%) 3.6 μm μm
Detectivity, D* (λpeak, f = 20 kHz) 3.0×109 5.0×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.45 0.55 A/W
Time constant, τ 35 45 ns
Dynamic resistance, Rd 55 75 Ω

Spectral response

(Typ., Tamb = Tchip = 293 K)


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Temperature sensor characteristics

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