InAsSb Photovoltaic DetectorPVA-2TE-4.5-1×1-TO8-wAl2O3-70

2.3 – 4.9 µm, two-stage thermoelectrically cooled

PVA-2TE-4.5-1×1-TO8-wAl₂O₃-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs_1-xSb_x alloy. 3° wedged sapphire window (wAl₂O₃) prevents unwanted interference effects. This detector does not contain mercury or cadmium and is compliant with the RoHS Directive.

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Features

High performance in the 2.3 – 4.9 µm spectral range

Two-stage thermoelectrically cooled

Excellent linearity

No bias required

No 1/f noise

Environmentally friendly

Specification (T_a = 20°C, Vb = 0 mV)

Parameter	PVA-2TE-4.5-1×1-TO8-wAl₂O₃-70
Active element material	epitaxial InAsSb heterostructure
Cut-on wavelength λ_cut-on(10%), µm	2.3±0.2
Peak wavelength λ_peak, µm	4.0±0.3
Cut-off wavelength λ_cut-off(10%), µm	4.9±0.2
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	~7.0×10⁹
Current responsivity R_i(λpeak), A/W	~1.1
Time constant τ, ns	~10
Resistance R, Ω	~60
Active element temperature T_det, K	~230K
Active area A, mm×mm	1×1
Package	TO8
Acceptance angle, Φ	~70°
Window	wAl₂O₃