HgCdTe (MCT) Photovoltaic DetectorPV-4TE-3.4

2.2 – 3.6 µm, four-stage thermoelectrically cooled

PV-4TE-3.4 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λ_opt = 3.4 μm. Cut‑on wavelength can be optimized upon request. Reverse bias V_b may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl₂O₃) window prevents unwanted interference effects.

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Features

High performance in the 2.2 - 3.6 µm spectral range

Four-stage thermoelectrically cooled

No bias required

No 1/f noise

Specification (T_a = 20°C, Vb = 0 mV)

Parameter	PV-4TE-3.4
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	3.4
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥2.0×10¹¹
*Detectivity D(λ_opt), cm⋅Hz^1/2/W**	≥1.0×10¹¹
Current responsivity R_i(λ_opt), A/W	≥0.8
Time constant τ, ns	≤200
Resistance-active area product R⋅A, Ω⋅cm²	≥20
Active element temperature T_det, K	~195
Active area A, mm×mm	0.05×0.05, 0.1×0.1
Package	TO8, TO66
Acceptance angle, Φ	~70°
Window	wAl₂O₃