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HgCdTe (MCT) Photoconductive DetectorPCI-6
1.0 – 6.3 µm, ambient temperature, optically immersed
PCI-6 is uncooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 6.0 μm. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise.
Features
High performance in the 1.0 - 6.3 µm spectral range
Ambient temperature operation
Hyperhemiimmersion microlens technology applied
Long lifetime and MTBF
Stability and reliability
1/f noise
Specification (Ta = 20°C)
Parameter |
PCI-6 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
6.0 |
|
Detectivity D*(λpeak, 20 kHz), cm ⋅Hz1/2/W |
≥2.5×109
|
|
|
Detectivity D*(λopt, 20 kHz), cm
⋅Hz1/2/W |
≥1.0×109
|
|
|
Current responsivity-optical area length product Ri(λopt)·LO, A·mm/W
|
≥0.2
|
|
|
Time constant τ, ns
|
≤500 |
|
|
1/f noise corner frequency fc, Hz
|
≤10k | |
|
Bias voltage-optical area length ratio Vb/LO, V/mm
|
≤0.4 | |
|
Resistance R, Ω
|
≤600 |
|
|
Optical area AO, mm×mm
|
0.5×0.5, 1×1, 2×2 |
|
|
Package
|
TO39, BNC | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
none |
|
Spectral response (Ta = 20°C)
Mechanical layout, mm
BNC package
TO39 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifiers
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