InAsSb four-stage thermoelectrically-cooled optically immersed photovoltaic infrared detectorPVIA-4TE-4-1x1-TO8-wAl2O3-36

PVIA-4TE-4-1x1-TO8-wAl₂O₃-36 is a four-stage thermoelectrically cooled (4TE) photovoltaic IR detector based on InAsSb heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 2.0 μm to 4.7 μm. Its optical area (A_o) is 1 mm × 1 mm. The detector is available in the TO8 package with a 3 deg. sapphire window (wAl₂O₃) to prevent unwanted interference effects.

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Features

Spectral range: 2.0 to 4.7 µm

RoHS-compliant III-V material

Unique optical immersion technology applied

Back-side illuminated

Four-stage thermoelectricaly cooled

Long term stability

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO2

Breath analysis: C2H6, CH2O, NH3

Explosion prevention

Exhaust gas denitrification

Emission control (exhaust fumes, greenhouse gases)

Contactless temperature measurements (metal industry)

Detector configuration

Detector symbol	PVIA-4TE-4-1x1-TO8-wAl₂O₃-36
Detector type	photovoltaic
Active element material	epitaxial InAsSb heterostructure
Cooling	4TE (T_chip ≅ 200 K)
Temperature sensor	thermistor
Optical area, A_o	1 mm × 1 mm
Optical immersion	hyperhemisphere
Package	4TE-TO8
Acceptance angle, Φ	~36 deg.
Window	wAl₂O₃ (3 deg. wedged sapphire)

Specification

(T_amb = 293 K, T_chip = 200 K, V_b = 0 V)

Parameter	Value			Unit
	Min.	Typ.	Max
Cut-on wavelength, λ_cut-on (10%)	-	≤2.0	-	μm
Peak wavelength, λ_peak	-	3.5	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	4.7	-	μm
Detectivity, D* (λ_peak, f = 20 kHz)	2.0×10¹¹	3.7×10¹¹	-	cm·Hz^1/2/W
Current responsivity, R_i (λ_peak)	1.2	1.7	-	A/W
Time constant, τ	-	30	40	ns
Dynamic resistance, R_d	75	105	-	kΩ