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HgCdTe (MCT) Photovoltaic DetectorPVMI-4TE-8
2.0 – 9.0 µm, four-stage thermoelectrically cooled, optically immersed, multiple junction
PVMI-4TE-8 is four-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 8.0 μm. It especially useful as large active area detector operating within 2.0 to 9.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Features
Spectral range from 2.0 to 9.0 µm
Four-stage thermoelectrically cooled
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Sensitive to IR radiation polarisation
Specification (Ta = 20°C)
Parameter |
PVMI-4TE-8 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
8.0 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥8.0×109
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥6.0×109
|
|
|
Current responsivity Ri(λopt), A/W
|
≥0.2
|
|
|
Time constant τ, ns
|
≤4 |
|
|
Resistance R, Ω
|
500 to 2500 | |
|
Active element temperature Tdet, K
|
~195 | |
|
Optical area AO, mm×mm
|
1×1 |
|
|
Package
|
TO8, TO66 | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
wZnSeAR |
|
Spectral response (Ta = 20°C)
Mechanical layout, mm
4TE-TO8 package
4TE-TO66 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifiers
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