home-icon/Products / Infrared detectors / InAs/InAsSb Photovoltaic / InAs Photovoltaic Detector PVA-3-0.1×0.1-TO39-NW-90

InAs Photovoltaic DetectorPVA-3-0.1×0.1-TO39-NW-90

2.4 – 3.3 µm, ambient temperature

PVA-3-0.1×0.1-TO39-NW-90 is an uncooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive.

Features

High performance in the 2.4- 3.3 µm spectral range

Ambient temperature operation

Complying with the RoHS Directive

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVA-3-0.1×0.1-TO39-NW-90
Active element material
epitaxial InAs heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.4
Peak wavelength λpeak , µm
2.9±0.3
Cut-off wavelength λcut-off (10%), µm
≥3.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥5.0×109
Current responsivity Ripeak), A/W
≥1.1
Time constant τ, ns
≤20
Resistance R, Ω
≥2k
Active area A, mm×mm
0.1×0.1
Package
TO39
Acceptance angle, Φ
~90°
Window
none

Spectral response (Ta = 20°C, Vb = 0 mV)

PVA-3-1

Mechanical layout, mm

TO39-non-imm-3-1
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Temperature sensor characteristics

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