HgCdTe (MCT) Photovoltaic DetectorPV-3TE-10.6
3.2 – 12.0 µm, three-stage thermoelectrically cooled
PV-3TE-10.6 is three-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 10.6 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Features
High performance in the 3.2 - 12.0 µm spectral range
Three-stage thermoelectrically cooled
No bias required
No 1/f noise
Specification (Ta = 20°C, Vb = 0 mV)
Parameter |
PV-3TE-10.6 |
Active element material
|
epitaxial HgCdTe heterostructure |
Optimum wavelength λopt, µm
|
10.6 |
Detectivity D*(λpeak), cm⋅Hz1/2/W |
≥3.0×108
|
Detectivity D*(λopt), cm⋅Hz1/2/W
|
≥1.5×108
|
Current responsivity Ri(λopt), A/W
|
≥0.7
|
Time constant τ, ns
|
≤10 |
Resistance-active area product R⋅A, Ω⋅cm2
|
≥0.0002 |
Active element temperature Tdet, K
|
~210 |
Active area A, mm×mm
|
0.05×0.05 |
Package
|
TO8, TO66 |
Acceptance angle, Φ
|
~70° |
Window
|
wZnSeAR |
Spectral response (Ta = 20°C, Vb = 0 mV)
Mechanical layout, mm
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Application notes
Temperature sensor characteristics
Dedicated preamplifiers
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