HgCdTe (MCT) Photoconductive DetectorPC-4TE-13
1.0 – 15.0 µm, three-stage thermoelectrically cooled
PC-4TE-13 is four-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 13.0 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Features
High performance in the 1.0 - 15.0 µm spectral range
Four-stage thermoelectrically cooled
Hyperhemiimmersion microlens technology applied
Active area from 50×50 µm^2 to 2×2 mm^2
Long lifetime and MTBF
Stability and reliability
1/f noise
Specification (Ta = 20°C)
Parameter |
PC-4TE-13 |
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
Optimum wavelength λopt, µm
|
13.0 |
|
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W |
≥2.0×108
|
|
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
|
≥1.0×108
|
|
Current responsivity-active area length product Ri(λopt)·L, A·mm/W
|
≥0.01
|
|
Time constant τ, ns
|
≤6 |
|
1/f noise corner frequency fc, Hz
|
≤20k | |
Bias voltage-active area length ratio Vb/L, V/mm
|
≤3.0 | |
Resistance R, Ω
|
≤400 |
|
Active element temperature Tdet, K
|
~195 | |
Active area A, mm×mm
|
0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2 |
|
Package
|
TO8, TO66 | |
Acceptance angle, Φ
|
~70° | |
Window
|
wZnSeAR |
Spectral response (Ta = 20°C)
Mechanical layout, mm
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Application notes
Temperature sensor characteristics
Dedicated preamplifiers
Contact form