HgCdTe (MCT) Photoconductive DetectorPC-3TE-9

1.0 – 10.3 µm, three-stage thermoelectrically cooled

PC-3TE-9 is three-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λ_opt = 9.0 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

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Features

High performance in the 1.0 - 10.3 µm spectral range

Three-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

Active area from 50×50 µm^2 to 2×2 mm^2

Long lifetime and MTBF

Stability and reliability

1/f noise

Specification (T_a = 20°C)

Parameter	PC-3TE-9
Active element material	epitaxial HgCdTe heterostructure
Optimum wavelength λ_opt, µm	9.0
*Detectivity D(λ_peak, 20 kHz), cm⋅Hz^1/2/W**	≥1.5×10⁹
*Detectivity D(λ_opt, 20 kHz), cm⋅Hz^1/2/W**	≥1.0×10⁹
Current responsivity-active area length product R_i(λ_opt)·L, A·mm/W	≥0.075
Time constant τ, ns	≤60
1/f noise corner frequency f_c, Hz	≤10k
Bias voltage-active area length ratio V_b/L, V/mm	≤2.0
Resistance R, Ω	≤400
Active element temperature T_det, K	~210
Active area A, mm×mm	0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2
Package	TO8, TO66
Acceptance angle, Φ	~70°
Window	wZnSeAR