InAsSb one-stage thermoelectrically-cooled photovoltaic multi-junction infrared detectorPVMA-1TE-5-1×1-TO39-pSiAR-70

PVMA-1TE-5-1×1-TO39-pSiAR-70 is a one-stage thermoelectrically cooled photovoltaic multi-junction IR detector based on InAsSb heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 1.7 μm to 5.5 μm. Its active area (A) is 1 mm × 1 mm. The detector is available in the TO39 package with a planar silicon anti-reflection coating window (pSiAR).

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Features

Spectral range: 1.7 to 5.5 µm

RoHS compliant III-V material

Back-side illuminated

One-stage thermoelectrically cooled

Long term stability

No minimum order quantity required

Applications

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Flame and explosion detection

Threat warning systems

Heat-seeking, thermal signature detection

Dentistry

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx

Breath analysis: C2H6, CH2O, NH3, NO, OCS

Gas leak detection

Combustion process control

Non-destructive material testing

Detector configuration

Detector symbol	PVMA-1TE-5-1×1-TO39-pSiAR-70
Detector type	photovoltaic, multi-junction
Active element material	epitaxial InAsSb heterostructure
Cooling	1TE (T_chip ≅ 253 K)
Temperature sensor	thermistor
Active area, A	1 mm × 1 mm
Optical immersion	no
Package	1TE-TO39 (8 pin)
Acceptance angle, Φ	~70 deg.
Window	pSiAR (planar silicon, anti-reflection coating)

Specification (T_amb = 293 K, T_chip = 253 K, V_b = 0 V)

Parameter	Value			Unit
	Min.	Typ.	Max
Active element temperature, T_chip	-	253	-	K
Cut-on wavelength, λ_cut-on (10%)	-	2.0	-	μm
Peak wavelength, λ_peak	-	4.0±0.5	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	5.5	-	μm
Detectivity, D* (λ_peak, f = 20 kHz)	3.0×10⁹	1.0×10¹⁰	-	cm·Hz^1/2/W
Current responsivity, R_i (λ_peak)	0.08	0.18	-	A/W
Time constant, τ	-	20	80	ns
Dynamic resistance, R_d	1	4	-	kΩ