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InAsSb three-stage thermoelectrically-cooled photovoltaic infrared detectorPVA-3TE-5-AF1x1AR-TO8-wAl2O3AR-70
PVA-3TE-5-AF1x1AR-TO8-wAl2O3AR-70 is a three-stage thermoelectrically cooled (3TE) photovoltaic IR detector based on an InAsSb heterostructure for optimal performance and stability. Its key feature is an advanced anti-fringing solution that significantly reduces interference effects within the 1.4 - 4.0 μm spectral range. The detector features a large active area (1 mm × 1 mm) with an anti-reflection (AR) coating applied to improve signal quality and optical efficiency. The detector is available in a custom-designed 2 deg. wedged TO8 package with a 3 deg. sapphire window with anti-reflection coating (wAl2O3AR).
Features
Suited for operation with tunable lasers (QCL, ICL)
Significant reduction of interference effects within the 1.4 - 4.0 μm spectral range
Unique anti-fringing technology applied (with customization options to match individual system requirements)
RoHS-compliant III-V material
Back-side illuminated
Large active area
Anti-reflection coating on the active element
Custom-designed wedged cap
Applications
Gas detection, monitoring and analysis: CO, HF, NH3, C2H2, CH4, C2H6, HCl, H2CO, SO2, CO2, N2O, NOx
Laser-based gas sensing: TDLAS, CRDS, CEAS
Tunable laser control
Detector configuration
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Detector symbol
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PVA-3TE-5-AF1x1AR-TO8-wAl2O3AR-70 |
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Detector type
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photovoltaic |
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| Active element material | epitaxial InAsSb heterostructure | |
| Cooling | 3TE (Tchip ≅ 210 K) | |
| Temperature sensor | thermistor | |
| Active area, A | 1 mm × 1 mm | |
| Optical immersion | no | |
| Package | 3TE-TO8 (2 deg. wedged cup) | |
| Acceptance angle, Φ | ~70 deg. | |
| Window | wAl2O3AR (3 deg. wedged sapphire, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 210 K, Vb = 0 V)
| Parameter | Value | Unit | ||
| Min. | Typ. | Max | ||
| Cut-on wavelength, λcut-on (10%) | - | 1.64 | - | μm |
| Peak wavelength, λpeak | - | 4.0 | - | μm |
| Cut-off wavelength, λcut-off (10%) | - | 5.8 | - | μm |
| Detectivity, D* (λpeak, f = 20 kHz) | - | 1.4×1010 | - | cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | - | 2.0 | - | A/W |
| Time constant, τ | - | 124 | - | ns |
| Dynamic resistance, Rd | - | 70 | - | Ω |
Spectral response
(Typ., Tamb = 293 K, Tchip = 210 K)
Access to file
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Application notes
Temperature sensor characteristics
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