HgCdTe two-stage thermoelectrically cooled photovoltaic multi-junction infrared detectorsPVM-2TE-8-3x3-TO8/TO66-wZnSeAR-70

PVM-2TE-8-3x3-TO8-wZnSeAR-70 and PVM-2TE-8-3x3-TO66-wZnSeAR-70 are two-stage thermoelectrically cooled (2TE) photovoltaic multi-junction IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λ_spec) is 8.0 µm and their active area (A) is 3 mm × 3 mm. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

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Features

Spectral range: 2.0 to 10.0 µm

Large active area

Back-side illuminated

Fast response

Two-stage thermoelectrically cooled

No bias required

No1/f noise

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4, H2S, NO2, SOx

FTIR spectroscopy

Detector configuration

Detector symbol	PVM-2TE-8-3x3-TO8-wZnSeAR-70	PVM-2TE-8-3x3-TO66-wZnSeAR-70
Detector type	photovoltaic, multi-junction
Active element material	epitaxial HgCdTe heterostructure
Cooling	2TE (T_chip ≅ 230 K)
Temperature sensor	thermistor
Active area, A	3 mm × 3 mm
Optical immersion	no
Package	2TE-TO8	2TE-TO66
Acceptance angle, Φ	~70 deg.
Window	wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(T_amb = 293 K, T_chip = 230 K, V_b = 0 V)

Parameter	Value			Unit
	Min.	Typ.	Max.	-
Cut-on wavelength, λ_cut-on (10%)	-	2.0	-	μm
Peak wavelength, λ_peak	-	7.0±1.0	-	μm
Specific wavelength, λ_spec	-	8.0	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	10.0	-	μm
*Detectivity, D (λ_peak, 20 kHz)**	-	4.0×10⁸	-	cm⋅Hz^1/2/W
*Detectivity, D (λ_spec, 20 kHz)**	3.0×10⁸	-	-	cm⋅Hz^1/2/W
Current responsivity, R_i (λ_peak)	-	0.007	-	A/W
Current responsivity, R_i (λ_spec)	0.005	0.006	-	A/W
Time constant, τ	-	4	-	ns
Dynamic resistance, R_d	120	400	-	Ω