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Programmable IR detection module based on HgCdTe thermoelectrically cooled optically immersed photovoltaic multi-junction detectorLabM-I-10.6
LabM-I-10.6 is a detection module featuring a TE-cooled, optically immersed photovoltaic multi-junction IR detector based on an HgCdTe heterostructure (PVMI-4TE-10.6-1x1-TO8-wZnSeAR-36), integrated with a programmable, transimpedance amplifier (PIP series).
For proper operation, the VIGO programmable thermoelectric cooler controller PTCC-01 (sold separately) and Smart Manager Software (freeware) are required.
The LabM-I-10.6 detection module comes complete with PTCC-01 and Smart Manager Software, making it the best solution for prototyping and the R&D stage in various LWIR applications. This set provides a flexible approach to the different needs of system designers.
This is Selected Product, a lineup belonging to our family of MWIR and LWIR detectors and detection modules selected as the most suitable options for the majority of Mid Infrared applications. These products are available in a short lead time for small-batch orders and deliver reliable infrared solutions with stable parameters.
Features
Spectral range: 2.0 to 12.0 µm
Frequency bandwidth: DC to 120 MHz (typ.)
High performance and reliability
DC offset compensation
Integrated fan
M4 mounting hole
VIGO PTCC-01 TEC controller obligatory
Compatible with optical accessories
Versatile and flexible
Quantity discounted price
Fast delivery
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: SO2, NH3, SF6
CBRN threats detection
CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration
Free-space optical communication
FTIR spectroscopy
Medical bacteria identification
Dentistry
Glucose sensing
Research and prototyping
Detection module configuration
| Detection module symbol | LabM-I-10.6 |
| Detector symbol | PVMI-4TE-10.6-1x1-TO8-wZnSeAR-36 |
| Detector type | photovoltaic, multi-junction |
| Active element material | epitaxial HgCdTe heterostructure |
| Optical area, AO | 1 mm × 1 mm |
| Optical immersion | hyperhemisphere |
| Cooling | 4TE (Tchip≅200K) |
| Temperature sensor | thermistor |
| Acceptance angle, Φ | ~36 deg. |
| Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) |
| Amplifier symbol | PIP |
| Amplifier type | programmable, transimpedance |
| Signal output socket | SMA |
| Power supply, TE cooler, thermistor and fan socket | LEMO ECG.0B.309.CLN (female) |
Specification
(Tamb = 293 K, Tchip = 200 K, Rload = 50 Ω, unless otherwise noted; default module settings)
| Parameter | Test conditions, remarks | Value | Unit | ||
| Min. | Typ. | Max. | - | ||
| Active element temperature, Tchip | - | 200 | - | K | |
| Cut-on wavelength, λcut-on (10%) | At 10% of the peak responsivity | - | 2.0 | - | µm |
| Peak wavelength, λpeak | - | 9.0±1.0 | - | µm | |
| Specific wavelength, λspec | - | 10.6 | - | µm | |
| Cut-off wavelength, λcut-off (10%) | At 10% of the peak responsivity | - | 12.0 | - | µm |
| Detectivity, D* | At λ=λpeak, f=10MHz
At λ=λspec, f=10MHz |
-
6.0×108 |
1.4×109
1.2×109 |
-
- |
cm×Hz1/2/W |
| Output noise voltage density, vn | At f=10MHz | - | - | 400 | nV/Hz1/2 |
| Voltage responsivity, Rv | At λ=λpeak
At λ=λspec |
-
1.8×103 |
3.2×103
2.7×103 |
-
- |
V/W |
| Low cut-off frequency, flo-DC | DC coupling selected | - | 0 | - | Hz |
| Low cut-off frequency, flo-AC | AC coupling selected | - | 10 | - | Hz |
| High cut-off frequency, fhi-H | High bandwidth selected | 80 | 120 | - | MHz |
| High cut-off frequency, fhi-M | Mid bandwidth selected | - | 15 | - | MHz |
| High cut-off frequency, fhi-L | Low bandwidth selected | - | 1.5 | - | MHz |
| Output impedance, Rout | - | 50 | - | Ω | |
| Output voltage swing, Vout | - | - | ±1 | V | |
| Output voltage offset, Voff | - | - | ±20 | mV | |
| Power supply voltage (positive), +Vsup | - | +9 | - | V | |
| Power supply voltage (negative), -Vsup | - | -9 | - | V | |
| Power supply current consumption (positive), +Isup | - | - | +100 | mA | |
| Power supply current consumption (negative), -Isup | - | - | -100 | mA | |
| Fan power consumption, Pfan | - | - | 900 | mW | |
| TEC voltage, VTEC | - | - | 8.3 | V | |
| TEC current, ITEC | - | - | 0.4 | A | |
| Weight | - | 180 | - | g | |
Spectral response
(Typ., Tamb = 293 K, Tchip = 200 K)
Mechanical layout (unit: mm)
Access to file
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Application notes
Temperature sensor characteristics
For more information, please contact us
