home-icon/Products / Infrared Detections Modules / InAsSb and HgCdTe Multi-Channel IR Detection Modules / HgCdTe "all-in-one" LWIR quadrant detection module QM-10.6-01

“All-in-one” IR detection module based on an HgCdTe room-temperature photovoltaic multi-junction quadrant detectorQM-10.6-01

QM-10.6-01 is an “all-in-one” infrared position detection module. An uncooled photovoltaic multi-junction quadrant detector (PVMQ-10.6-1x1-TO8-NW-70), based on a HgCdTe heterostructure, is integrated with a DC-coupled four-channel transimpedance amplifier in a compact housing. The module features an integrated offset calibration function to ensure high measurement stability.

Features

Spectral range: 2.0 to 12.0 µm

Frequency bandwidth: DC to 1.0 MHz (typ.)

Low crosstalk

M4 mounting hole

Single power supply

Switchable offset calibration modes via protected hardware button

Optional 0 to 3 V voltage swing modification available upon request for direct ADC compatibility

Compatible with optical accessories

Detector and detector chip options available for custom integration

Applications

Gas detection, monitoring and analysis: SO2, NH3, SF6

CBRN threats detection

CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration

Free-space optical communication

FTIR spectroscopy

Dentistry

Detection module configuration



Detection module symbol QM-10.6-01
Detector symbol PVMQ-10.6-1x1-TO8-NW-70
Detector type photovoltaic, multi-junction
Active element material epitaxial HgCdTe heterostructure
Active area of a single element, A 1 mm × 1 mm
Number of elements 4 (2 rows, 2 columns)
Active area pitch, mm 1.15 (horizontally)

1.20 (vertically)

Optical immersion no
Cooling no
Temperature sensor n/a
Acceptance angle, Φ ~70 deg.
Window no
Amplifier type four-channel, transimpedance
Signal output socket 4 x MCX
Power supply socket DC 2.1/5.5

Specification

(Tamb = Tchip = 293 K, Rload = 1 MΩ, each channel)



Parameter Test conditions, remarks Value Unit
Min. Typ. Max. -
Active element temperature, Tchip Tchip=Tamb - ~293 - K
Cut-on wavelength, λcut-on (10%) At 10% of the peak responsivity - 2.0 - µm
Peak wavelength, λpeak - 8.5±1.0 - µm
Specific wavelength, λspec - 10.6 - µm
Cut-off wavelength, λcut-off (10%) At 10% of the peak responsivity - 12.0 - µm
Detectivity, D* At λ=λpeak, f=100kHz

At λ=λspec, f=100kHz

-

 

-

1.0×107

 

8.0×106

-

 

-

cm×Hz1/2/W
Output noise voltage density, vn At f=100kHz - - 4.5 μV/Hz1/2
Voltage responsivity, Rv At λ=λpeak

At λ=λspec

-

-

3.0×102

2.0×102

-

-

V/W
Low cut-off frequency, flo DC coupling - 0 - Hz
High cut-off frequency, fhi - 1.0 - MHz
Output impedance, Rout - 50 -
Output voltage swing, Vout - 0-4 - V
Output voltage offset, Voff - - ±20 mV
Power supply voltage, Vsup +6 - +12 VDC
Power supply current consumption, Isup - 70 230 mA

Spectral response

(Typ., Tamb = Tchip = 230 K, each channel)

Line graph showing detectivity (D*) versus wavelength (λ) from 2 to 13 micrometers. D* rises sharply to a peak around 7 μm, then gradually decreases beyond 8 μm, dropping steeply after 12 μm.

Mechanical layout (unit: mm)

Technical drawing of an electronic device with labeled dimensions, side and top views, showing elements such as active elements, cooling fins, output signals, LED diode, power supply, and various measurements in millimeters.
form-close

Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.

download-icon

Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy

green-checkmark

Thank you!

This file has been sended to your e-mail.

For more information, please contact us


    SalesSupport

    Detectors ModulesEPI-wafers