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HgCdTe two-stage thermoelectrically-cooled photovoltaic infrared detectorPV-2TE-5-0.33x0.33AR-TO8-wAl2O3AR-70
PV-2TE-5-0.33x0.33AR-TO8-wAl2O3AR-70 is a two-stage thermoelectrically cooled (2TE) photovoltaic IR detector based on an HgCdTe heterostructure for optimal performance and stability. The detector features an active area of 0.33 mm × 0.33 mm with an anti-reflection (AR) coating applied to improve signal quality and optical efficiency. The detector is available in a TO-8 package with a 3 deg. sapphire window with anti-reflection coating (wAl2O3AR).
Features
Suited for operation with tunable lasers (QCL, ICL)
Spectral range: 3.0 to 5.7 µm
Excellent linearity
Back-side illuminated
Anti-reflection coating on the active element
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, N2O, NOx
Laser-based gas sensing: TDLAS, CRDS, CEAS
Tunable laser control
Tunable laser control
Threat warning systems
Dentistry
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Gas leak detection
Combustion process control
Detector configuration
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Detector symbol
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PV-2TE-5-0.33x0.33AR-TO8-wAl2O3AR-70 |
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Detector type
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photovoltaic |
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| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | 2TE (Tchip ≅ 230 K) | |
| Temperature sensor | thermistor | |
| Active area, A | 0.33 mm × 0.33 mm | |
| Optical immersion | no | |
| Package | 2TE-TO8 | |
| Acceptance angle, Φ | ~70 deg. | |
| Window | wAl2O3AR (3 deg. wedged sapphire, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 230 K, Vb = 0 V)
| Parameter | Value | Unit | ||
| Min. | Typ. | Max | - | |
| Cut-on wavelength, λcut-on (10%) | - | 3.0 | - | μm |
| Peak wavelength, λpeak | - | 4.0 | - | μm |
| Specific wavelength, λspec | - | 5.0 | - | μm |
| Cut-off wavelength, λcut-off (10%) | - | 5.7 | - | μm |
| Detectivity, D* (λpeak, f = 20 kHz) | - | 2.7×1010 | - | cm·Hz1/2/W |
| Detectivity, D* (λspec, f = 20 kHz) | - | 1.4×1010 | - | cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | - | 2.0 | - | A/W |
| Current responsivity, Ri (λspec) | - | 1.0 | - | A/W |
| Time constant, τ | - | 50 | - | ns |
| Dynamic resistance, Rd | - | 2.0 | - | kΩ |
| Power at 5% deviation from linearity, Pdev=5% (4.55 μm) | - | 3.0 | - | mW |
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
Access to file
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Application notes
Temperature sensor characteristics
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