InGaAs room-temperature infrared detection module with an integrated ASIC-type amplifierIC01420-01

IC01420-01 is a detection module featuring an uncooled photovoltaic IR detector chip based on an InGaAs heterostructure, integrated with an ASIC-type (application-specific integrated circuit), transimpedance amplifier. This module has a square-shaped cap featuring a 3 deg. wedged sapphire window.

See specification

A gold coin and a small green electronic component with gold pins are placed side by side on a reflective surface. The electronic component is rectangular with a flat yellow top.

Download datasheet

See related files

Features

Cut-off wavelength: 1.7 μm

RoHS-compliant III-V material

Anti-reflection coating on the active element

Front-side illuminated

ASIC-type electronics

Programmable gain

DC coupling (AC coupling on request)

Compact, surface-mount type package

Long-term stability and reliability

High ambient operating and storage temperature

Low power consumption

Possibility of mounting optical filters

Applications

Gas detection, monitoring and analysis: CH4

Telecommunication

LIDARs

Laser range finders, laser warning systems

Lasers and diodes life tests

Food analysis

Pharmaceutical analysis

Specification

(T_amb = 293 K, R_load = 50 Ω)

Parameter	Test conditions, remarks	Value			Unit
		Min.	Typ.	Max.	-
Active element temperature, T_chip	T_chip = T_amb	-	293	-	K
Peak wavelength, λ_peak		-	1.62±0.03	-	µm
Cut-off wavelength, λ_cut-off(10%)	At 10% of the peak responsivity	1.69	1.71	-	µm
Detectivity, D*	At λ=λ_peak, f=10kHz	-	2.5×10¹⁰	-	cm×Hz^1/2/W
Output noise voltage density, v_n	At f=10kHz	-	910	-	nV/Hz^1/2
Voltage responsivity, R_v	At λ=λ_peak	-	2.56×10⁵	-	V/W
Transimpedance, K_i		256	-	10 000	kV/A
Low cut-off frequency, f_lo	DC coupling	-	0	-	Hz
High cut-off frequency, f_hi		-	1	-	MHz
Output impedance, R_out		-	50	-	Ω
Reference voltage output, V_ref		-	1	-	V
Power supply voltage, +V_sup		-	3.3	-	V
Power consumption, P		-	0.15	-	W