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“All-in-one” IR detection module based on HgCdTe room temperature photovoltaic multi-junction quadrant detectorQM-10.6

QM-10.6 is an “all-in-one” infrared position detection module. An uncooled photovoltaic multi-junction quadrant detector (PVMQ-10.6-1x1-TO8-NW-90), based on an HgCdTe heterostructure, is integrated with a DC-coupled four-channel transimpedance amplifier in a compact housing.

Features

Spectral range: 2.0 to 12.0 µm

Frequency bandwidth: DC to 1.0 MHz (typ.)

Low crosstalk

M4 mounting hole

Single power supply

Compatible with optical accessories

Detector and detector chip options available for custom integration

Applications

Gas detection, monitoring and analysis: SO2, NH3, SF6

CBRN threats detection

CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration

Free-space optical communication

FTIR spectroscopy

Dentistry

Detection module configuration

Detection module symbol QM-10.6
Detector symbol PVMQ-10.6-1x1-TO8-NW-70
Detector type photovoltaic, multi-junction
Active element material epitaxial HgCdTe heterostructure
Active area of a single element, A 1 mm × 1 mm
Number of elements 4 (2 rows, 2 columns)
Active area pitch, mm 1.15 (horizontally)

1.20 (vertically)

Optical immersion no
Cooling no
Temperature sensor n/a
Acceptance angle, Φ ~70 deg.
Window no
Amplifier type four-channel, transimpedance
Signal output socket 4 x MCX
Power supply socket DC 2.1/5.5

Specification

(Tamb = Tchip = 293 K, Rload = 1 MΩ, each channel)

Parameter Test conditions, remarks Value Unit
Min. Typ. Max. -
Active element temperature, Tchip Tchip=Tamb - ~293 - K
Cut-on wavelength, λcut-on (10%) At 10% of the peak responsivity - 2.0 - µm
Peak wavelength, λpeak - 8.5±1.0 - µm
Specific wavelength, λspec - 10.6 - µm
Cut-off wavelength, λcut-off (10%) At 10% of the peak responsivity - 12.0 - µm
Detectivity, D* At λ=λpeak, f=100kHz

At λ=λspec, f=100kHz

-

 

-

1.0×107

 

8.0×106

-

 

-

cm×Hz1/2/W
Output noise voltage density, vn At f=100kHz - - 4.5 μV/Hz1/2
Voltage responsivity, Rv At λ=λpeak

At λ=λspec

-

-

3.0×102

2.0×102

-

-

V/W
Low cut-off frequency, flo DC coupling - 0 - Hz
High cut-off frequency, fhi - 1.0 - MHz
Output impedance, Rout - 50 -
Output voltage swing, Vout - 0-4 - V
Output voltage offset, Voff - - ±20 mV
Power supply voltage, Vsup - +7.5 - V

Spectral response

(Typ., Tamb = Tchip = 230 K, each channel)

Line graph showing detectivity (D*) versus wavelength (λ) from 2 to 13 micrometers. D* rises sharply to a peak around 7 μm, then gradually decreases beyond 8 μm, dropping steeply after 12 μm.

Mechanical layout (unit: mm)

Technical drawing of an electronic device showing front, side, top, and sectional views, with detailed measurements, labeled components, and connection points for output signals and power supply.
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Temperature sensor characteristics

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