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Photonics Integrated Circuits technologies for MIDIR (MIRPIC)
- Agreement no.
- Duration:
- Overall budget:
- Co-funding:
- Project coordinator:
- Partners:
- TECHMATSTRATEG-III/0026/2019-00
- 1/04/2021-31/12/2024
- PLN 29,255,381.61
- PLN 26,564,942.41
- VIGO Photonics S.A.
- Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw University of Technology
- Agreement no. TECHMATSTRATEG-III/0026/2019-00
- Duration: 1/04/2021-31/12/2024
- Overall budget: PLN 29,255,381.61
- Co-funding: PLN 26,564,942.41
- Project coordinator: VIGO Photonics S.A.
- Partners: Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw University of Technology
The result of the project will be a “product innovation” in the form of Application Specific Photonic Integrated Circuits (ASPIC) designed to work in the mid-infrared range, MidIR (3-5.5 μm). In particular, different building blocks necessary to define ASPICs will be designed, manufactured and tested, which will allow to design, manufacture and test the parameters of the ASPIC demonstrator. The demonstrator will reflect the typical characteristics of integrated photonics, i.e. multi-channel, integration on a common substrate, electronic and optical interfaces, and packaging.
The Project is co-funded by the National Center for Research and Development under the TECHMATSTRATEG programme.
Technologies of materials and structures for the detection of long-wave infrared radiation (LWIR)
- Agreement no.
- Duration:
- Project budget:
- Eligible costs:
- Co-funding:
- Project coordinator:
- Consortium members:
- TECHMATSTRATEG1/347751/5/NCBR/2017
- 01/01/2018-31/12/2020
- PLN 7,078,906.00
- PLN 7,078,906.00
- PLN 6,490,261.00
- Łukasiewicz Research Network – Institute of Microelectronics and Photonics
- Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Military University of Technology, Rzeszow
- Agreement no. TECHMATSTRATEG1/347751/5/NCBR/2017
- Duration: 01/01/2018-31/12/2020
- Project budget: PLN 7,078,906.00
- Eligible costs: PLN 7,078,906.00
- Co-funding: PLN 6,490,261.00
- Project coordinator: Łukasiewicz Research Network – Institute of Microelectronics and Photonics
- Consortium members: Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Military University of Technology, Rzeszow
The goal of the project was to develop technologies for materials and structures for detection of long-wave infrared radiation (8-14 μm) at elevated temperatures (>200 K). The given spectral range is important for many applications, including military (imaging, detection of trace amounts of warfare gases), civilian, medical, industrial (inspection and diagnostics), space (observation of Earth from space, detection of trace amounts of substances) or environmental (monitoring of greenhouse gas emissions).
The subject of the project was semiconductor supergrids of the second kind based on antimony compounds of group III of the periodic table. This material is considered a successor to cadmium mercury telluride (HgCdTe), which is now widely used in infrared detection instruments.
The use of instruments based on type II supergrids has made it possible to produce more reliable, cheaper, lighter and energy-efficient devices. Antimony supergrid technology allows significant freedom in the design of materials and structures; however, due to its high degree of complexity, it requires high precision and control. For this reason, despite tremendous progress in the field over the past few years, it has not been possible to produce devices that operate in the long-term infrared range and elevated temperatures. Further research in this direction is therefore needed.
The project will develop and optimize supergrid technology aimed at obtaining the best possible materials and structures for infrared sensing in the mentioned conditions. Both experimental techniques and advanced simulations will be used.
The project was co-financed by the National Center for Research and Development under the TECHMATSTRATEG Program.
Technologies of semiconductor materials for high power and high frequency electronics (WidePOWER)
- Agreement no.
- Duration:
- Overall budget:
- Co-funding:
- Project leader:
- Consortium members:
- TECHMATSTRATEG1/346922/NCBR/2017
- 01/12/2017-31/05/2021
- PLN 20,200,000.00
- PLN 19,700,000.00
- Warsaw University of Technology
- VIGO Photonics S.A., Wrocław University of Science and Technology, Łukasiewicz Research Network – Institute of Microelectronics and Photonics
- Agreement no. TECHMATSTRATEG1/346922/NCBR/2017
- Duration: 01/12/2017-31/05/2021
- Overall budget: PLN 20,200,000.00
- Co-funding: PLN 19,700,000.00
- Project leader: Warsaw University of Technology
- Consortium members: VIGO Photonics S.A., Wrocław University of Science and Technology, Łukasiewicz Research Network – Institute of Microelectronics and Photonics
The aim of the WidePOWER project was to develop technologies for the production of semiconductor materials for high-power and high-frequency electronics, including epitaxial structures based on SiC, GaN and InGaP-GaAs. As part of the project, VIGO Photonics S.A. developed a technology for growth by MOCVD of epitaxial structures based on the InGaP compound on GaAs substrates.
The development of epi-structure growth technology for high-power and high-frequency electronics based on InGaP-GaAs compounds was carried out on a production AIX 2800 G4 device from Aixtron. One of the key steps was to study the thermal growth conditions from the point of view of the disordered structure effect (so-called dis-ordering) and to optimize the growth rate, as well as to maintain the reproducibility of the chemical composition of lattice-matched InGaP layers with GaAs. The obtained heterostructures are characterized by high homogeneity and high structural quality, and enable applications in power electronics instruments.
The recipients of the project results are electronic companies producing primarily devices – transistors and manufacturers of electronic systems. An additional benefit of the project is the possibility of using its results in the production of other epitaxial structures, such as solar cells.
Products (structures based on InGaP compounds) developed as the result of the implementation of the project results have been included in the standard VIGO offer, which includes a wide spectrum of infrared detectors.
