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Micro-size IR detection module based on InAsSb room temperature optically immersed photovoltaic detectormicroM-I-5
microM-I-5 is a detection module featuring an uncooled, optically immersed photovoltaic IR detector based on an InAsSb heterostructure (PVIA-5-1x1-TO39-NW-36), integrated with a micro-size, transimpedance amplifier.
For proper operation, it is recommended to use the PPS-03-09 VIGO power supply.
The microM-I-5 detection module is easy to assemble in space-limited systems.
Features
Spectral range: 2.0 to 5.6 µm
RoHS-compliant III-V material
Frequency bandwidth: DC to 10 MHz
Very small size
Convenient to use
Versatile
Cost effective OEM version available
Quantity discounted price
Applications
Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring
Flame and explosion detection
Threat warning systems
Heat-seeking, thermal signature detection
Dentistry
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Gas leak detection
Combustion process control
Non-destructive material testing
Detection module configuration
| Detection module symbol | microM-I-5 |
| Detector symbol | PVIA-5-1x1-TO39-NW-36 |
| Detector type | photovoltaic |
| Active element material | epitaxial InAsSb heterostructure |
| Optical area, Ao | 1 mm × 1 mm |
| Optical immersion | hyperhemisphere |
| Cooling | no |
| Temperature sensor | n/a |
| Acceptance angle, Φ | ~36 deg. |
| Window | no |
| Amplifier type | micro-size, transimpedance |
| Signal output plug | SMA |
| Power supply plug | 03T-JWPF-VSLE-S (male) |
Specification
(Tamb = Tchip = 293 K, Rload = 50 Ω, unless otherwise noted)
| Parameter | Test conditions, remarks | Value | Unit | ||
| Min. | Typ. | Max. | - | ||
| Active element temperature, Tchip | Tchip = Tamb | - | 293 | - | K |
| Cut-on wavelength, λcut-on (10%) | At 10% of the peak responsivity | - | - | 2.0 | µm |
| Peak wavelength, λpeak | - | 3.9 | - | µm | |
| Cut-off wavelength, λcut-off (10%) | At 10% of the peak responsivity | - | 5.9 | - | µm |
| Detectivity, D* | At λ=λpeak, f=100kHz | - | 8.5×109 | - | cm×Hz1/2/W |
| Output noise voltage density, vn | At f=100kHz | - | 400 | - | nV/Hz1/2 |
| Voltage responsivity, Rv | At λ=λpeak | - | 3.4×104 | - | V/W |
| Low cut-off frequency, flo | DC coupling | - | 0 | - | Hz |
| High cut-off frequency, fhi | - | 10 | - | MHz | |
| Output impedance, Rout | - | 50 | - | Ω | |
| Output voltage swing, Vout | - | - | ±1 | V | |
| Output voltage offset, Voff | - | - | ±20 | mV | |
| Power supply voltage (positive), +Vsup | - | +9 | - | V | |
| Power supply voltage (negative), -Vsup | - | -9 | - | V | |
| Power supply current consumption (positive), +Isup | - | - | +50 | mA | |
| Power supply current consumption (negative), -Isup | - | - | -30 | mA | |
| Weight | - | 40 | - | g | |
Spectral response
(Typ., Tamb = Tchip = 293 K)
Mechanical layout (unit: mm)
Access to file
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Application notes
Temperature sensor characteristics
Dedicated accessories
For more information, please contact us
