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Applications

VIGO Photonics epitaxy division produces customized, high-grade III-V compound semiconductor epitaxial structures, with excellent process control, for photonic devices,including lasers (F-P, VCSEL, QCL), photodetectors, and microelectronic devices such as diodes, transistors, and other devices.

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VCSELs

InGaAs photodiodes

InGaAs FPAs

QCLs

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QCLs

Epi-wafers for QCLs

High-precision, scalable MOCVD growth of Quantum Cascade Laser epiwafers are supported by advanced calibration methods and extensive characterization capabilities.
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InGaAs FPAs

InGaAs FPAs epi-wafers

InGaAs is a compound semiconductor whose optical properties can be tailored by varying the amounts of Indium, Gallium, Arsenic, and Phosphorus in its structure.
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InGaAs photodiodes

InGaAs 1.7um PIN, Extended InGaAs, and InGaAs APD epi-wafers

InGaAs is a compound semiconductor material that is sensitive to NIR light, particularly between ~0.9 to 1.7 μm.
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VCSELs

VCSELs epi-wafers

The VCSEL structure, grown using MBE or MOCVD techniques, consists of a thin multilayer stack with a Fabry-Perot cavity containing quantum wells, enclosed by top and bottom Distributed Bragg Reflectors (DBRs).
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