“All-in-one” IR detection module based on four-element linear HgCdTe thermoelectrically cooled photovoltaic detector4EM-5

4EM-5 is an “all-in-one” infrared detection module. A thermoelectrically cooled photovoltaic four-element linear detector, based on an HgCdTe heterostructure, is integrated with a DC-coupled four-channel transimpedance amplifier, a fan, and a thermoelectric cooler controller in a compact housing. It is designed for applications requiring accurate beam positioning and displacement monitoring.

See specification

A compact, rectangular industrial device with a circular lens or sensor in the center and a finned heat sink on the back, standing on a reflective surface against a white background.

Download datasheet

See related files

Features

Spectral range: 3.5 to 6.0 µm

Frequency bandwidth: DC to 1.0 MHz (typ.)

Low crosstalk

Integrated TEC controller and fan

M4 mounting hole

Single power supply

Compatible with optical accessories

Detector and detector chip options available for custom integration

Applications

Laser measurements: power monitoring and control, beam profiling and positioning, calibration

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Flame and explosion detection

Threat warning systems

Heat-seeking, thermal signature detection

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx

Breath analysis: C2H6, CH2O, NH3, NO, OCS

Detection module configuration

Detection module symbol	4EM-5
Detector type	photovoltaic
Active element material	epitaxial HgCdTe heterostructure
Active area of a single element, A	0.2 mm × 0.2 mm
Number of elements	4 (1 row)
Active area pitch, mm	0.25
Optical immersion	no
Cooling	3TE (T_chip≅230K)
Temperature sensor	thermistor
Acceptance angle, Φ	~70 deg.
Window	pSiAR (planar silicon, anti-reflection coating)
Amplifier type	four-channel, transimpedance
Signal output socket	4 x MCX
Power supply socket	DC 2.1/5.5

Specification

(T_amb = 293 K, T_chip = 230 K, R_load= 1 MΩ, each channel)

Parameter	Test conditions, remarks	Value			Unit
		Min.	Typ.	Max.	-
Active element temperature, T_chip		-	230	-	K
Cut-on wavelength, λ_cut-on(10%)	At 10% of the peak responsivity	-	3.5	-	µm
Peak wavelength, λ_peak		-	4.7	-	µm
Specific wavelength, λ_spec		-	5.0	-	µm
Cut-off wavelength, λ_cut-off(10%)	At 10% of the peak responsivity	-	6.0	-	µm
Detectivity, D*	At λ=λ_peak, f=100kHz At λ=λ_spec, f=100kHz	- -	9.0×10⁹ 8.8×10⁹	- -	cm×Hz^1/2/W
Output noise voltage density, v_n	At f=100kHz	-	-	0.5	μV/Hz^1/2
Voltage responsivity, R_v	At λ=λ_peak At λ=λ_spec	- -	1.6×10⁵ 1.5×10⁵	- -	V/W
Low cut-off frequency, f_lo	DC coupling	-	0	-	Hz
High cut-off frequency, f_hi		-	1.0	-	MHz
Output impedance, R_out		-	50	-	Ω
Output voltage swing, V_out		-	0-4	-	V
Output voltage offset, V_off		-	-	±20	mV
Power supply voltage, V_sup		-	+7.5	-	V