home-icon/Products / Infrared Detections Modules / Selected Line / HgCdTe "all-in-one" LWIR detection module UM-I-10.6

“All-in-one” IR detection module based on HgCdTe thermoelectrically cooled photovoltaic multi-junction optically immersed detectorUM-I-10.6

UM-I-10.6 is a detection module featuring a TE-cooled, optically immersed photovoltaic multi-junction IR detector based on a HgCdTe heterostructure (PVMI-2TE-10.6-1x1-TO8-wZnSeAR-36), integrated with a transimpedance amplifier and thermoelectric cooler controller in one package (AIP series).
The UM-I-10.6 detection module is a compact, convenient and user-friendly solution.

Features

Spectral range: 2.0 to 13.0 µm

Frequency bandwidth: DC to 100 MHz

Integrated TEC controller and fan

M4 mounting hole

DC monitor

Single power supply

Compatible with optical accessories

Quantity discounted price

Fast delivery

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: SO2, NH3, SF6

CBRN threats detection

CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration

Free-space optical communication

FTIR spectroscopy

Medical bacteria identification

Dentistry

Glucose sensing

Detection module configuration

Detection module symbol UM-I-10.6
Detector symbol PVMI-2TE-10.6-1x1-TO8-wZnSeAR-36
Detector type photovoltaic, multi-junction
Active element material epitaxial HgCdTe heterostructure
Optical area, AO 1 mm × 1 mm
Optical immersion hyperhemisphere
Cooling 2TE (Tchip≅230K)
Acceptance angle, Φ ~36 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)
Amplifier symbol AIP
Amplifier type "all-in-one", transimpedance
Signal output socket SMA
DC monitor output socket SMA
Power supply socket DC 2.5/5.5

Specification

(Tamb = 293 K, Tchip = 230 K, Rload = 50 Ω, unless otherwise noted)

Parameter Test conditions, remarks Value Unit
Min. Typ. Max. -
Active element temperature, Tchip - 230 - K
Cut-on wavelength, λcut-on (10%) At 10% of the peak responsivity - 2.0 - µm
Peak wavelength, λpeak - 8.0±1.0 - µm
Specific wavelength, λspec - 10.6 - µm
Cut-off wavelength, λcut-off (10%) At 10% of the peak responsivity - 13.0 - µm
Detectivity, D* At λ=λpeak, averaged over 1MHz to fhi

At λ=λspec, averaged over 1MHz to fhi

-

 

3.5×108

1.1×109

 

7.4×108

-

 

-

cm×Hz1/2/W
Output noise voltage density, vn Averaged over 1MHz to fhi - - 350 nV/Hz1/2
Voltage responsivity, Rv At λ=λpeak

At λ=λspec

-

6.5×102

2.5×103

1.7×103

-

-

V/W
Voltage responsivity, Rv At λ = λpeak, DC monitor

At λ = λpeak, DC monitor

2.2×102

1.5×102

-

-

-

-

V/W
Low cut-off frequency, flo DC coupling - 0 - Hz
High cut-off frequency, fhi 100 - - MHz
Low cut-off frequency, flo DC monitor - 0 - Hz
High cut-off frequency, fhi DC monitor - 150 - kHz
Output impedance, Rout - 50 -
Output voltage swing, Vout - - ±0.7 V
Output voltage offset, Voff - - ±20 mV
Power supply voltage, Vsup - 5 - V
Power supply current consumption, Isup - - 1.2 A
Weight - 235 - g

Spectral response

(Typ., Tamb = 293 K, Tchip = 230 K)

Graph showing detectivity (D*) versus wavelength (λ) from 2.0 to 14.0 micrometers. Detectivity ranges from 1E+08 to 1E+10 cm·Hz^1/2/W, peaking around 4.0 to 10.0 micrometers. The curve rises and then gradually descends.

Mechanical layout (unit: mm)

Technical diagram of an electronic device showing top, side, and bottom views. Labeled components include DC monitor, power supply, signal output, focal plane, and power switch. Dimensions in millimeters are noted throughout.
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