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InAsSb room-temperature optically immersed photovoltaic infrared detectorPVIA-5-0.3x0.3-TO46-pAl2O3-40
PVIA-5-0.3x0.3-TO39-pAl2O3-40 is an uncooled photovoltaic IR detector based on an InAsSb heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 1.7 μm to 5.4 μm. Its optical area (Ao) is 0.3 mm × 0.3 mm. The detector is available in the TO46 package with a planar sapphire window (pAl2O3).
Innovative lens fabrication technology enables faster production of high-performance detectors.
Features
Spectral range: 1.7 to 5.4 µm
RoHS-compliant III-V material
High ambient operating and storage temperature
Innovative chemically processed microlens technology applied
Back-side illuminated
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring
Flame and explosion detection
Threat warning systems
Heat-seeking, thermal signature detection
Dentistry
Gas leak detection
Combustion process control
Non-destructive material testing
Detector configuration
| Detector symbol | PVIA-5-0.3x0.3-TO46-pAl2O3-40 |
| Detector type | photovoltaic |
| Active element material | epitaxial InAsSb heterostructure |
| Cooling | no |
| Temperature sensor | n/a |
| Optical area, Ao | 0.3 mm × 0.3 mm |
| Optical immersion | hemisphere (chemical processing) |
| Package | TO46 (3 pin) |
| Acceptance angle, Φ | ~40 deg. |
| Window | pAl2O3 (planar sapphire) |
Specification
(Tamb = Tchip = 293 K, Vb = 0 V)
| Parameter | Value | Unit | ||
| Min. | Typ. | Max | ||
| Cut-on wavelength, λcut-on (10%) | - | 1.7 | - | μm |
| Peak wavelength, λpeak | - | 4.0 | - | μm |
| Cut-off wavelength, λcut-off (10%) | - | 5.4 | - | μm |
| Detectivity, D* (λpeak, f = 20 kHz) | - | 4.0×109 | - | cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | - | 1.0 | - | A/W |
| Time constant, τ | - | 20 | - | ns |
| Dynamic resistance, Rd | - | 300 | - | Ω |
Spectral response
(Typ., Tamb = Tchip = 293 K)
Access to file
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Application notes
Temperature sensor characteristics
Recommended amplifier
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