home-icon/Products / Infrared detectors / HgCdTe LN2-cooled IR Detectors / HgCdTe photoconductive IR detector PC-LN2-14-1x1-VFP-NW-50

HgCdTe photoconductive infrared detector optimized for operation at 77 KPC-LN2-14-1x1-VFP-NW-50

PC-LN2-14-1x1-VFP-NW-50 is a photoconductive IR detector based on HgCdTe heterostructures for optimal performance and stability. This detector is optimized for operation at cryogenic temperatures, typically at 77 K (liquid nitrogen temperature). Its 10% cut-off wavelength (λcut-off) is 17.4 µm and its active area (A) is 1 mm × 1 mm. The detector should operate in optimum bias current (Ib) and voltage readout mode. Performance at low frequencies is reduced due to 1/f noise. The detector is available in an especially designed flatpack package (without a window) for easy self-assembly in LN2 metal dewars. This detector is widely used in demanding applications requiring exceptional sensitivity and wide spectral range.

Features

Spectral range: over 17.0 µm

Large active area

Front-side illuminated

Active element material optimized for operation at 77 K

Especially designed flatpack package (without window) for easy self-assembly in LN2 metal dewars

Possible assembly in LN2 metal dewars (Kadel KR163-FSMA2, Kadel KR-323) by VIGO Photonics (on request)

Possible assembly of temperature sensor

Active area dimension 0.25 mm × 0.25 mm available (on request)

Other acceptance angle values available (on request)

Applications

FTIR spectroscopy

Detector configuration

Detector symbol
PC-LN2-14-1x1-VFP-NW-50
Detector type
photoconductive
Active element material epitaxial HgCdTe heterostructure
Cooling LN2

(for operation in 77 K)

Temperature sensor no
Active area, A 1 mm × 1 mm
Optical immersion no
Package VFP

(flatpack)

Acceptance angle, Φ ~50 deg.
Window no

Specification

(Tamb = 293 K, Tchip = 77 K, Ib = 15 mA)

Parameter Value
Unit
Min. Typ. Max. -
Peak wavelength, λpeak - 12.1 - μm
Cut-off wavelength, λcut-off (10%) - 17.4 - μm
Detectivity, D* (λpeak, 20 kHz) - 1.9×1010 - cm⋅Hz1/2/W
Voltage responsivity, Ripeak) - 500 - V/W
Resistance, R - 55 - Ω
Bias current, Ib - 15 - mA

Spectral response

(Tamb = 293 K, Tchip = 77 K, Ib = 15 mA)

Graph showing detectivity (D*) versus wavelength (λ) in micrometers (μm). The detectivity range is from 1E+09 to 1E+11 cm·Hz^1/2/W, peaking around 8 μm and dropping sharply after 16 μm.
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Temperature sensor characteristics

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