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HgCdTe 32-channel thermoelectrically-cooled infrared detection module with an integrated first stage transimpedance amplifier32EM-5-01
32EM-5-01 is a detection module featuring a 32-element linear thermoelectrically cooled photovoltaic infrared detector based on a HgCdTe heterostructure. Each active element has dimensions of 0.125 mm × 1 mm. 32EM-5-01 includes an integrated first-stage transimpedance amplifier. For proper operation, external heatsinking and an external thermoelectric cooler controller are required.
Features
Spectral range: 2.0 to 5.6 µm (typ.)
Frequency bandwidth: DC to 400 kHz (typ.)
Low crosstalk
Compact, small size
Convenient cryogenic-free operation
External heatsink is necessary (recommended thermal resistance of ~2 K/W)
External TEC controller is necessary
Applications
Contactless temperature measurements: railway transport, industrial and laboratory processes monitoring
Flame and explosion detection
Threat warning systems
Heat-seeking, thermal signature detection
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Gas leak detection
Combustion process control
Non-destructive material testing: optical sorting systems
Detection module configuration
| Detection module symbol | 32EM-5-01 |
| Detector type | photovoltaic |
| Active element material | epitaxial HgCdTe heterostructure |
| Active area of a single element, A | 0.125 mm × 1.000 mm |
| Number of elements | 32 (1 row) |
| Active element pitch | 0.15 mm |
| Optical immersion | no |
| Cooling | 3TE (Tchip≅230K) |
| Temperature sensor | thermistor |
| Acceptance angle, Φ | ≥40 deg. |
| Window | pAl2O3AR
(planar sapphire, anti-reflection coating) |
| Amplifier type | 32-channel, 1st-stage, transimpedance |
Specification
(Tamb = 293 K, Tchip = 230 K, Rload = 1 MΩ)
Parameter |
Test conditions, remarks |
Value |
Unit |
|||
|
|
Min. | Typ. | Max | - | ||
|
Active element temperature, Tchip
|
- | ~230 | - | K | ||
|
Cut-on wavelength, λcut-on (10%)
|
At 10% of the peak responsivity | - | 2.0 | - | µm | |
|
Peak wavelength, λpeak
|
- | 4.2 | - | µm | ||
|
Optimal wavelength, λspec
|
- | 5.0 | - | µm | ||
|
Cut-off wavelength, λcut-off (10%)
|
At 10% of the peak responsivity | - | 5.6 | - | µm | |
| Detectivity, D* |
At λ=λpeak, f=10kHz
At λ=λspec, f=10kHz
|
-
- |
5.0×109
3.9×109
|
-
-
|
cm⋅Hz1/2/W
|
|
| Output noise voltage density, vn |
At f=10kHz
|
- |
250
|
-
|
nV/Hz1/2
|
|
| Voltage responsivity, Rv |
At λ=λpeak
At λ=λspec
|
-
- |
4.0×104
3.1×104
|
-
-
|
V/W
|
|
|
Low cut-off frequency, flo
|
DC coupling | - | 0 | - | Hz | |
| High cut-off frequency, fhi | - | 400 | - | kHz | ||
| Output impedance, Rout | - | 50 | - | Ω | ||
| Output voltage swing, Vout | Negative output | - | -1 | - | V | |
|
Output voltage offset, Voff
|
- | - | -200 | mVDC | ||
| Power supply voltage (positive), +Vsup | - | +5 | - | V | ||
| Power supply voltage (negative), -Vsup | - | -5 | - | V | ||
| Power supply current consumption (positive), +Isup | - | +100 | - | mA | ||
| Power supply current consumption (negative), -Isup | - | -100 | - | mA | ||
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
Access to file
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Application notes
Temperature sensor characteristics
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