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InAsSb 32-channel IR detection module based on a 32-element InAsSb superlattice thermoelectrically cooled photovoltaic detector array32MM-5
32MM-5 is a 32-channel IR detection module. It features a 32-element thermoelectrically cooled photovoltaic infrared detector array, based on an InAsSb superlattice heterostructure, integrated with a transimpedance, AC-coupled amplifier and a thermoelectric cooler controller.
This compact, multi-element module is well-suited for use in IR imaging, spectroscopy, gas analysis and other systems requiring simultaneous multi-channel detection.
Features
Spectral range: 1.7 to 5.7 µm (typ.)
Frequency bandwidth: 1 Hz to 1 MHz (typ.)
RoHS-compliant III-V material
High ambient operating and storage temperature
Back-side illuminated
Low crosstalk
Convenient cryogenic-free operation
Integrated TEC controller
An external heatsink is necessary
Applications
Contactless temperature measurements: railway transport, industrial and laboratory processes monitoring
Flame and explosion detection
Threat warning systems
Heat-seeking, thermal signature detection
Simultaneous multi-point gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Gas leak detection and imaging
Detection module configuration
| Detection module symbol | 32MM-5 |
| Detector type | photovoltaic |
| Active element material | epitaxial InAsSb superlattice heterostructure |
| Active area of a single element, A | 0.1 mm × 0.1 mm |
| Number of elements | 32
(6 rows, 6 columns, without active elements in the corners) |
| Active element pitch | 0.15 mm
(horizontally and vertically) |
| Optical immersion | no |
| Cooling | 3TE (Tchip≅230K) |
| Temperature sensor | thermistor |
| Acceptance angle, Φ | ≥40 deg. |
| Window | pAl2O3AR
(planar sapphire, anti-reflection coating) |
| Amplifier type | 32-channel, transimpedance |
| Power supply and signal output socket | Molex 87831-5019
(matching plug PN: 87568-5044) |
Specification
(Tamb = 293 K, Tchip = 230 K, Rload = 1 MΩ, each channel)
Parameter |
Test conditions, remarks |
Value |
Unit |
|||
|
|
Min. | Typ. | Max | - | ||
|
Active element temperature, Tchip
|
- | ~230 | - | K | ||
|
Cut-on wavelength, λcut-on (10%)
|
At 10% of the peak responsivity | - | 1.7 | - | µm | |
|
Peak wavelength, λpeak
|
- | 3.8 | - | µm | ||
|
Cut-off wavelength, λcut-off (10%)
|
At 10% of the peak responsivity | - | 5.7 | - | µm | |
| Detectivity, D* |
At λ=λpeak, f=500kHz
|
- |
4.0×109
|
-
|
cm⋅Hz1/2/W
|
|
| Output noise voltage density, vn |
At f=500kHz
|
- | 0.5 |
-
|
μV/Hz1/2
|
|
| Voltage responsivity, Rv |
At λ=λpeak
|
- |
1.94×105
|
-
|
V/W
|
|
|
Low cut-off frequency, flo
|
AC coupling | - | 1 | - | Hz | |
| High cut-off frequency, fhi | - | 1 | - | MHz | ||
| Output impedance, Rout | - | 50 | - | Ω | ||
| Output voltage swing, Vout | Negative output | - | -1 | - | V | |
|
Output voltage offset, Voff
|
- | - | -200 | mVDC | ||
| Power supply voltage (positive), +Vsup | - | +5.0 | - | V | ||
| Power supply voltage (negative), -Vsup | - | -5.0 | - | V | ||
| Power supply current consumption (positive), +Isup | - | +1.0 | - | A | ||
| Power supply current consumption (negative), -Isup | - | -0.1 | - | A | ||
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
Access to file
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Application notes
Temperature sensor characteristics
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