InGaAs 1.7um PIN, Extended InGaAs, and InGaAs APD epi-wafers

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InGaAs is a compound semiconductor material that is sensitive to NIR light, particularly between ~0.9 to 1.7 μm.

An InGaAs 1.7 μm PIN epiwafer refers to a specific type of epitaxially grown semiconductor wafer that contains a PIN (p-type/intrinsic/n-type) photodiode structure based on Indium Gallium Arsenide (InGaAs) material, optimized for photodetection up to 1.7 micrometers (μm) wavelength. InGaAs 1.7 μm PIN epi-wafers are perfectly suited for SWIR cameras and detectors (night vision, hyperspectral imaging) optical communication (especially in the 1.3–1.6 μm bands), gas and chemical sensing, LIDAR, laser range finding and military surveillance.

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An Extended InGaAs epi-wafer refers to a semiconductor structure designed for photodiode fabrication, enabling detection and measurement of light in the extended near-infrared to mid-infrared range. VIGO’s Extended InGaAs epi-wafers are suitable for use in a variety of fields, including telecommunications, spectroscopy, gas sensing, environmental monitoring, and industrial process control.

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An InGaAs APD epi-wafer refers to an epitaxial structure optimized for avalanche photodiodes, designed to deliver high sensitivity and low noise performance in the near-infrared spectrum. VIGO’s InGaAs APD epitaxial services are widely used by photodiode manufacturers developing solutions for high-speed optical communication, LiDAR systems, fluorescence detection, spectroscopy, and other precision applications requiring reliable NIR detection.

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Similar applications

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QCLs

Epi-wafers for QCLs

High-precision, scalable MOCVD growth of Quantum Cascade Laser epiwafers are supported by advanced calibration methods and extensive characterization capabilities.

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InGaAs FPAs

InGaAs FPAs epi-wafers

InGaAs is a compound semiconductor whose optical properties can be tailored by varying the amounts of Indium, Gallium, Arsenic, and Phosphorus in its structure.

InGaAs photodiodes