HgCdTe (MCT) Photovoltaic DetectorPVMQ-10.6
2.0 – 12.0 µm, ambient temperature, multiple junction quadrant
PVMQ-10.6 is an uncooled IR phtovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant geometry. The device is optimized for the maximum performance at 10.6 µm. The main application of PVMQ detector is laser beam profiling and positioning.
Features
High performance in the 2.0 - 12.0 µm spectral range
Ambient temperature operation
No bias required
No 1/f noise
Operation from DC to high frequency
Sensitive to IR radiation polarisation
Specification (Ta = 20°C)
Parameter |
PVMQ-10.6 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
10.6 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥2.0×107
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥1.0×107
|
|
| Current responsivity Ri(λopt), A/W |
≥0.002
|
|
|
Time constant τ, ns
|
≤1.5 |
|
|
Resistance R, Ω
|
30 to 150 | |
|
Active area of single element A, mm×mm
|
1×1 |
|
|
Distance between elements, μm
|
200 | |
|
Package
|
TO8 | |
|
Acceptance angle, Φ
|
~70° | |
|
Window
|
none |
|
Spectral response (Ta = 20°C)
Mechanical layout, mm
TO8 package
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Application notes
Temperature sensor characteristics
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