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HgCdTe (MCT) Photovoltaic Detector

PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36

2.0 – 12.0 µm, four-stage thermoelectrically cooled, optically immersed, multiple junction

PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36 is four-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at  λopt = 10.6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

ORDER

See specification

Features

High performance in wide spectral range from 2.0 to 12.0 µm

Four-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Operation from DC to high frequency

Sensitive to IR radiation polarisation

Versatility

Quantity discounted price

Fast delivery

Applications

CO2 laser (10.6 µm) measurements

Laser power monitoring and control

Laser beam profiling and positioning

Laser calibration

Dentistry

Specification (Ta = 20°C)

Parameter
PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
≤2.0
Peak wavelength λpeak, µm
8.5±2.0
Optimum wavelength λopt, µm
10.6
Cut-off wavelength λcut-off (10%) µm
≥12.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥3.0×109
Detectivity D*(λopt), cm⋅Hz1/2/W
≥2.5×109
Current responsivity Ripeak), A/W
≥0.25
Current responsivity Riopt), A/W
≥0.18
Time constant τ, ns
≤3
Resistance R, Ω
≥120
Active element temperature Tdet, K
~195
Active area A, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~36°
Window
wZnSeAR

Spectral response (Ta = 20°C)

PVMI-4TE-10.6-1x1-TO8-wZnSeAR-36

Mechanical layout, mm

4TE-TO8-imm-2

4TE-TO8 package

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Temperature sensor characteristics

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