HgCdTe (MCT) Photovoltaic Detector

PVMI-3TE-10.6

2.0 – 13.0 µm, three-stage thermoelectrically cooled, optically immersed, multiple junction

PVMI-3TE-10.6 is three-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 10.6.0 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification

Features

Spectral range from 2.0 to 13.0 µm

Three-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PVMI-3TE-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥2.0×109
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.5×109
Current responsivity Riopt), A·mm/W
≥0.1
Time constant τ, ns
≤3
Resistance R, Ω
100 to 400
Active element temperature Tdet, K
~210
Optical area AO, mm×mm
1×1
Package
TO8, TO66
Acceptance angle, Φ
~36°
Window
wZnSeAR

Spectral response (Ta = 20°C)

PVMI-3TE-10.6-1

Mechanical layout, mm

3TE-TO8-imm-4-1

3TE-TO8 package

3TE-TO66-imm-3-1

3TE-TO66 package

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Temperature sensor characteristics

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