HgCdTe (MCT) Photovoltaic DetectorPVMI-10.6
2.0 – 12.0 µm, ambient temperature, multiple junction, optically immersed
PVMI-10.6 is an uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 10.6 μm. It especially useful as large active area detector operating within 2.0 to 12.0 µm spectral range.
Features
Spectral range from 2.0 to 12.0 µm
Ambient temperature operation
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Sensitive to IR radiation polarisation
Specification (Ta = 20°C)
Parameter |
PVMI-10.6 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
10.6 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥2.0×108
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥1.0×108
|
|
| Current responsivity-optical area product Ri(λopt)·LO, A·mm/W |
≥0.04
|
|
|
Time constant τ, ns
|
≤1.5 |
|
|
Resistance R, Ω
|
20 to 150 | |
|
Optical area AO, mm×mm
|
1×1, 2×2 |
|
|
Package
|
TO39, BNC | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
none |
|
Spectral response (Ta = 20°C)
Mechanical layout, mm
BNC package
TO39 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifier
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