HgCdTe (MCT) Photovoltaic DetectorPVM-2TE-10.6
2.0 – 13.0 µm, two-stage thermoelectrically cooled, multiple junction
PVM-2TE-10.6 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The detector is optimized for the maximum performance at λopt = 16.6 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Features
Spectral range from 2.0 to 13.0 µm
Large active area from 1×1 mm^2 to 3×3 mm^2
Two-stage thermoelectrically cooled
No bias required
No 1/f noise
Sensitive to IR radiation polarisation
Specification (Ta = 20°C)
Parameter |
PVM-2TE-10.6 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
10.6 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥2.0×108
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥1.0×108
|
|
|
Current responsivity-active area product Ri(λopt)·L, A·mm/W
|
≥0.01
|
|
|
Time constant τ, ns
|
≤4 |
|
|
Resistance R, Ω
|
90 to 350 | |
|
Active element temperature Tdet, K
|
~230 | |
|
Active area A, mm×mm
|
1×1, 2×2 |
|
|
Package
|
TO8, TO66 | |
|
Acceptance angle, Φ
|
~70° | |
|
Window
|
wZnSeAR |
|
Spectral response (Ta = 20°C)
Mechanical layout, mm
2TE-TO8 package
2TE-TO66 package
Access to file
Access to this file is limited. In order to download it, please provide all the information and submit the form.
Application notes
Temperature sensor characteristics
Dedicated preamplifiers
Contact form
For more information, please contact us directly:
