HgCdTe (MCT) Photovoltaic Detector

PVM-2TE-10.6

2.0 – 13.0 µm, two-stage thermoelectrically cooled, multiple junction

PVM-2TE-10.6 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The detector is optimized for the maximum performance at λopt = 16.6 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification

Features

Spectral range from 2.0 to 13.0 µm

Large active area from 1×1 mm^2 to 3×3 mm^2

Two-stage thermoelectrically cooled

No bias required

No 1/f noise

Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PVM-2TE-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥2.0×108
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×108
Current responsivity-active area product Riopt)·L, A·mm/W
≥0.01
Time constant τ, ns
≤4
Resistance R, Ω
90 to 350
Active element temperature Tdet, K
~230
Active area A, mm×mm
1×1, 2×2
Package
TO8, TO66
Acceptance angle, Φ
~70°
Window
wZnSeAR

Spectral response (Ta = 20°C)

PVM-2TE-10.6-1

Mechanical layout, mm

2TE-TO8-non-imm-4-1

2TE-TO8 package

2TE-TO66-non-imm-3-1

2TE-TO66 package

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