InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36
2.6 – 5.3 µm, ambient temperature, optically immersed
PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does not contain mercury or cadmium and is complying with the RoHS Directive.
Features
High performance in the 2.3- 5.3 µm spectral range
Ambient temperature operation
Complying with the RoHS Directive
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Specification (Ta = 20°C, Vb = 0 mV)
Parameter |
PVIA-5-1×1-TO39-NW-36 |
|
|
Active element material
|
epitaxial InAsSb heterostructure |
|
|
Cut-on wavelength λcut-on (10%), µm
|
≤2.6 |
|
|
Peak wavelength λpeak , µm
|
4.5±0.6 | |
|
Cut-off wavelength λcut-off (10%), µm
|
≥5.3 | |
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥5.0×109
|
|
|
Current responsivity Ri(λpeak), A/W
|
≥1.2
|
|
|
Time constant τ, ns
|
≤15 |
|
|
Resistance R, Ω
|
≥70 |
|
|
Optical area AO, mm×mm
|
1×1 |
|
|
Package
|
TO39 | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
none |
|
Spectral response (Ta = 20°C, Vb = 0 mV)
Mechanical layout, mm
TO39 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifier
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