home-icon/Products / Infrared detectors / InAs/InAsSb Photovoltaic / PVIA-2TE-5-1×1-TO8-wAl2O3-36

InAsSb Photovoltaic Detector

PVIA-2TE-5-1×1-TO8-wAl2O3-36

2.6 – 5.3 µm, two-stage thermoelectrically cooled

PVIA-2TE-5-1×1-TO8-wAl2O3-36 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device.  It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

See specification

Features

High performance in the 2.6- 5.3 µm spectral range

Two-stage thermoelectrically cooled

Complying with the RoHS Directive

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVIA-2TE-5-1×1-TO8-wAl2O3-36
Active element material
epitaxial InAs heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.6
Peak wavelength λpeak , µm
4.5±0.6
Cut-off wavelength λcut-off (10%), µm
≥5.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥4.0×1010
Current responsivity Ripeak), A/W
≥1.2
Time constant τ, ns
≤5
Resistance R, Ω
≥1.0k
Active element temperature Tdet, K
~230K
Optical area AO, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~36°
Window
wAl2O3

Spectral response (Ta = 20°C, Vb = 0 mV)

PVIA-2TE-5-1

Mechanical layout, mm

2TE-TO8-imm-6-1

2TE-TO8 package

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Temperature sensor characteristics

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