HgCdTe (MCT) Photovoltaic Detector
PVI-5-1×1-TO39-NW-36
2.4 – 5.5 µm, ambient temperature, optically immersed
PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

Features
2.4 – 5.5 µm spectral range
Ambient temperature operation
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Convenient to use
Very small size
Cost-effective solution
Quantity discounted price
Fast delivery
Applications
Contactless temperature measurements (railway transport, industrial and laboratory processes monitoring)
Flame and explosion detection
Threat warning systems
Gas detection, monitoring and analysis (CO, CO2, NOx)
Breath analysis
Solids analysis
Leakage control in gas pipelines
Combustion process control
Specification (Ta = 20°C, Vb = 0 mV)
Parameter |
PVI-5-1×1-TO39-NW-36 |
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
Cut-on wavelength λcut-on (10%) µm
|
2.4±0.5 | |
Peak wavelength λpeak, µm
|
4.2±0.5 | |
Optimum wavelength λopt, µm
|
5.0 |
|
Cut-off wavelength λcut-off (10%) µm
|
5.5±0.3 | |
Detectivity D*(λpeak), cm![]() |
≥3.0×1010
|
|
Detectivity D*(λopt), cm
![]() |
≥1.0×1010
|
|
Current responsivity Ri(λpeak), A/W
|
≥2.0
|
|
Current responsivity Ri(λopt), A/W
|
≥1.0
|
|
Time constant τ, ns
|
≤150 |
|
Resistance R, Ω
|
≥100 |
|
Optical area AO, mm×mm
|
1×1 |
|
Package
|
TO39 | |
Acceptance angle, Φ
|
~36° | |
Window
|
none |
Spectral response (Ta = 20°C, Vb = 0 mV)

Mechanical layout, mm

TO39 package
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Application notes
Temperature sensor characteristics
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