HgCdTe (MCT) Photovoltaic Detector

PVI-5-1×1-TO39-NW-36

2.4 – 5.5 µm, ambient temperature, optically immersed

PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λ_opt = 5 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias V_b may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

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Features

2.4 – 5.5 µm spectral range

Ambient temperature operation

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Convenient to use

Very small size

Cost-effective solution

Quantity discounted price

Fast delivery

Applications

Contactless temperature measurements (railway transport, industrial and laboratory processes monitoring)

Flame and explosion detection

Threat warning systems

Gas detection, monitoring and analysis (CO, CO2, NOx)

Breath analysis

Solids analysis

Leakage control in gas pipelines

Combustion process control

Specification (T_a = 20°C, Vb = 0 mV)

Parameter	PVI-5-1×1-TO39-NW-36
Active element material	epitaxial HgCdTe heterostructure
Cut-on wavelength λ_cut-on (10%) µm	2.4±0.5
Peak wavelength λ_peak, µm	4.2±0.5
Optimum wavelength λ_opt, µm	5.0
Cut-off wavelength λ_cut-off (10%) µm	5.5±0.3
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥3.0×10¹⁰
*Detectivity D(λ_opt), cm⋅Hz^1/2/W**	≥1.0×10¹⁰
Current responsivity R_i(λ_peak), A/W	≥2.0
Current responsivity R_i(λ_opt), A/W	≥1.0
Time constant τ, ns	≤150
Resistance R, Ω	≥100
Optical area A_O, mm×mm	1×1
Package	TO39
Acceptance angle, Φ	~36°
Window	none

Spectral response (T_a = 20°C, Vb = 0 mV)

Mechanical layout, mm

TO39 package

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Temperature sensor characteristics

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HgCdTe (MCT) Photovoltaic Detector