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HgCdTe (MCT) Photovoltaic Detector

PVI-4TE-6-1×1-TO8-wZnSeAR-36

3.0 – 6.9 µm, ambient temperature, optically immersed

PVI-4TE-6-1×1-TO8-wZnSeAR-36 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

ORDER

See specification

Features

Very high performance in 3.0 – 6.9 µm spectral range

Four-stage thermoelctrically cooled

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Wide dynamic range

Versatility

Quantity discounted price

Fast delivery

Applications

Gas detection, monitoring and analysis (CO, CO2, NH3, NOx)

Flue gas denitrification

Fuel combustion monitoring at power plants and other industrial facilities

Contactless temperature measurements

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVI-4TE-6-1×1-TO8-wZnSeAR-36
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
3.0±1.0
Peak wavelength λpeak, µm
5.5±0.5
Optimum wavelength λopt, µm
6.0
Cut-off wavelength λcut-off (10%) µm
6.9±0.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥8.0×1010
Detectivity D*(λopt), cm⋅Hz1/2/W
≥6.0×1010
Current responsivity Ripeak), A/W
≥2.7
Current responsivity Riopt), A/W
≥1.5
Time constant τ, ns
≤50
Resistance R, Ω
≥300
Active element temperature Tdet, K
~195
Optical area AO, mm×mm
1×1
Package
TO8
Acceptance angle, Φ
~36°
Window
wZnSeAR

Spectral response (Ta = 20°C, Vb = 0 mV)

PVI-4TE-6-1x1-TO8-wZnSeAR-36

Mechanical layout, mm

4TE-TO8-imm-1

4TE-TO8 package

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Temperature sensor characteristics

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