home-icon/Products / Infrared detectors / InAs/InAsSb Photovoltaic / PVA-2TE-5-0.1×0.1-TO8-wAl2O3-70

InAsSb Photovoltaic Detector

PVA-2TE-5-0.1×0.1-TO8-wAl2O3-70

2.6 – 5.3 µm, two-stage thermoelectrically cooled

PVA-2TE-5-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAsSb alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

See specification

Features

High performance in the 2.6- 5.3 µm spectral range

Two-stage thermoelectrically cooled

Complying with the RoHS Directive

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVA-2TE-5-0.1×0.1-TO8- wAl2O3-70
Active element material
epitaxial InAsSb heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.6
Peak wavelength λpeak , µm
4.5±0.6
Cut-off wavelength λcut-off (10%), µm
≥5.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥4.0×109
Current responsivity Ripeak), A/W
≥1.2
Time constant τ, ns
≤20
Resistance R, Ω
≥1.0k
Active element temperature Tdet, K
~230K
Active area A, mm×mm
0.1×0.1
Package
TO8
Acceptance angle, Φ
~70°
Window
wAl2O3

Spectral response (Ta = 20°C, Vb = 0 mV)

PVA-2TE-5-1

Mechanical layout, mm

2TE-TO8-non-imm-5-1

2TE-TO8 package

form-close

Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.

download-icon

Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy

green-checkmark

Thank you!

This file has been sended to your e-mail.

Contact form

For more information, please contact us directly: