home-icon/Products / Infrared detectors / InAs/InAsSb Photovoltaic / PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70

InAs Photovoltaic Detector

PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70

2.4 – 3.2 µm, two-stage thermoelectrically cooled

PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

See specification

Features

High performance in the 2.4- 3.2 µm spectral range

Two-stage thermoelectrically cooled

Complying with the RoHS Directive

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVA-2TE-3-0.1×0.1-TO8- wAl2O3-70
Active element material
epitaxial InAs heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.4
Peak wavelength λpeak , µm
2.9±0.3
Cut-off wavelength λcut-off (10%), µm
≥3.2
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥5.0×1010
Current responsivity Ripeak), A/W
≥1.1
Time constant τ, ns
≤15
Resistance R, Ω
≥200k
Active element temperature Tdet, K
~230K
Active area A, mm×mm
0.1×0.1
Package
TO8
Acceptance angle, Φ
~70°
Window
wAl2O3

Spectral response (Ta = 20°C, Vb = 0 mV)

PVA-2TE-3-1

Mechanical layout, mm

2TE-TO8-non-imm-5

2TE-TO8 package

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Temperature sensor characteristics

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