InGaAs room-temperature photovoltaic infrared detector

PVA-1.7-d1-TO39-wAl2O3-45

PVA-1.7-d1-TO39-wAl2O3-45 is a room-temperature IR photovoltaic detector based on InGaAs heterostructure. It enables the detection of radiation in the range from 0.9 μm to 1.7 μm. The detector is mounted in the TO39 package. The 3 deg. wedged sapphire window protects against mechanical damage and environmental influences. This detector is mercury and cadmium-free and is fully compliant with the RoHS Directive.

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Features

Cut-off wavelength: 1.7 μm

III-V material

High ambient operating and storage temperature

Long-term stability and reliability

Front-side illuminated

Applications

DIRCM

LIDAR

Air monitoring

Leakage detection

Gas detection

Lasers and diodes life tests

Detector configuration

Detector type	photovoltaic
Active element material	epitaxial InGaAs heterostructure
Active area diameter, d_A	1 mm
Immersion	no
Cooling	no
Package	TO39
Acceptance angle, Φ	~45 deg.
Window	wAl₂O₃ (3 deg. wedged sapphire)

Specification

(T_amb = 293 K, V_b = -5 V, unless otherwise noted)

Parameter	Value			Unit
	Min.	Typ.	Max.	–
Active element temperature, T_chip = T_amb	–	293	–	K
Peak wavelength, λ_peak	1.56	1.59	1.62	μm
Cut-off wavelength, λ_cut-off (10%)	1.69	1.71	–	μm
Detectivity, D* (λ= 1.55 μm, f = 20 kHz)	2.0×10¹¹	6.0×10¹¹	–	cm·Hz^1/2/W
Current responsivity, R_i (λ= 1.55 μm)	1.0	1.02	–	A/W
Dark current, I_dark	–	–	100	nA
Dark current density, J_dark	–	4.0×10^-6	1.0×10^-5	A/cm²
Terminal capacitance, C_t	27	30	33	pF
3 dB bandwidth	–	250	–	MHz
Resistance, R	3	–	–	MΩ
Bias voltage, V_b	–	-5	–	V