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InGaAs room-temperature photovoltaic infrared detector


PVA-1.7-d1-TO39-wAl2O3-45 is a room-temperature IR photovoltaic detector based on InGaAs heterostructure. It enables the detection of radiation in the range from 0.9 μm to 1.7 μm. The detector is mounted in the TO39 package. The 3 deg. wedged sapphire window protects against mechanical damage and environmental influences. This detector is mercury and cadmium-free and is fully compliant with the RoHS Directive.


Cut-off wavelength: 1.7 μm

III-V material

High ambient operating and storage temperature

Long-term stability and reliability

Front-side illuminated




Air monitoring

Leakage detection

Gas detection

Lasers and diodes life tests

Detector configuration

Detector type photovoltaic
Active element material epitaxial InGaAs heterostructure
Active area diameter, dA 1 mm
Immersion no
Cooling no
Package TO39
Acceptance angle, Φ ~45 deg.
Window wAl2O3

(3 deg. wedged sapphire)


(Tamb = 293 K, Vb = -5 V, unless otherwise noted)

Parameter Value Unit
Min. Typ. Max.
Active element temperature, Tchip = Tamb 293 K
Peak wavelength, λpeak 1.56 1.59 1.62 μm
Cut-off wavelength, λcut-off (10%) 1.69 1.71 μm
Detectivity, D* (λ= 1.55 μm, f = 20 kHz) 2.0×1011 6.0×1011 cm·Hz1/2/W
Current responsivity, Ri (λ= 1.55 μm) 1.0 1.02 A/W
Dark current, Idark 100 nA
Dark current density, Jdark 4.0×10-6 1.0×10-5 A/cm2
Terminal capacitance, Ct 27 30 33 pF
3 dB bandwidth 250 MHz
Resistance, R 3
Bias voltage, Vb -5 V

Spectral response

(Typ., Tamb = 293 K)

Mechanical layout

(Unit: mm)


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Temperature sensor characteristics

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