HgCdTe (MCT) Photoconductive Detector

PV-3

2.3 – 3.2 µm, ambient temperature

PV-3 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 3.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

See specification

Features

High performance in the 2.3 – 3.2 µm spectral range

Ambient temperature operation

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PV-3
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
3.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥8.0×109
Detectivity D*(λopt), cm⋅Hz1/2/W
≥6.5×109
Current responsivity Riopt), A/W
≥0.5
Time constant τ, ns
≤350
Resistance-active area product R⋅A, Ω⋅cm2
≥1
Active area A, mm×mm
0.05×0.05, 0.1×0.1
Package
TO39 BNC
Acceptance angle, Φ
~90° ~102°
Window
none

Spectral response (Ta = 20°C, Vb = 0 mV)

PV-3-1

Mechanical layout, mm

BNC-non-imm-2

BNC package

TO39-non-imm-3

TO39 package

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Temperature sensor characteristics

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