HgCdTe (MCT) Photovoltaic Detector

PV-2TE-3.4

2.2 – 3.6 µm, two-stage thermoelectrically cooled

PV-2TE-3.4 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt = 3.4 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

See specification

Features

High performance in the 2.2 – 3.6 µm spectral range

Two-stage thermoelectrically cooled

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PV-2TE-3.4
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
3.4
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥6.0×1010
Detectivity D*(λopt), cm⋅Hz1/2/W
≥4.0×1010
Current responsivity Riopt), A/W
≥0.8
Time constant τ, ns
≤200
Resistance-active area product R⋅A, Ω⋅cm2
≥3
Active element temperature Tdet, K
~230
Active area A, mm×mm
0.05×0.05, 0.1×0.1
Package
TO8, TO66
Acceptance angle, Φ
~70°
Window
wAl2O3

Spectral response (Ta = 20°C, Vb = 0 mV)

PV-2TE-3.4-1

Mechanical layout, mm

2TE-TO8-non-imm-11

2TE-TO8 package

2TE-TO66-non-imm-9

2TE-TO66 package

form-close

Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.

download-icon

Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy

green-checkmark

Thank you!

This file has been sended to your e-mail.

Contact form

For more information, please contact us directly: