HgCdTe (MCT) Photovoltaic Detector

PEMI-10.6

2.0 – 12.0 µm, ambient temperature, optically immersed, photoelectromagnetic

PEMI-10.6 is an uncooled HgCdTe photovoltaic optically immersed IR detectors based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.

See specification

Features

Spectral range from 2.0 to 12.0 µm

Ambient temperature operation

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Operation from DC to high frequency

Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PEMI-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥1.6×108
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×108
Current responsivity-optical area product Riopt)·LO, A·mm/W
≥0.01
Time constant τ, ns
≤1.2
Resistance R, Ω
40 to 100
Optical area AO, mm×mm
1×1, 2×2
Package
PEM-SMA, PEM-TO8
Acceptance angle, Φ
~36°
Window
wZnSeAR

Spectral response (Ta = 20°C)

PEMI

Mechanical layout, mm

PEM-SMA-imm-1

PEM-SMA package

PEM-TO8-imm-1

PEM-TO8 package

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Temperature sensor characteristics

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