HgCdTe (MCT) Photovoltaic Detector

PEM-10.6

2.0 – 12.0 µm, ambient temperature, photoelectromagnetic

PEM-10.6 is an uncooled HgCdTe photovoltaic IR detector based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.

See specification

Features

Spectral range from 2.0 to 12.0 µm

Ambient temperature operation

No bias required

No 1/f noise

Operation from DC to high frequency

Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PEM-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥2.0×107
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×107
Current responsivity-active area product Riopt)·L, A·mm/W
≥0.002
Time constant τ, ns
≤1.2
Resistance R, Ω
≥40
Active area A, mm×mm
1×1, 2×2
Package
PEM-SMA PEM-TO8
Acceptance angle, Φ
~48° ~52°
Window
wZnSeAR

Spectral response (Ta = 20°C)

PEM

Mechanical layout, mm

PEM-SMA-non-imm-2

PEM-SMA package

PEM-TO8-non-imm-1

PEM-TO8 package

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Temperature sensor characteristics

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