HgCdTe (MCT) Photoconductive Detector

PCI-3TE-12-1×1-TO8-wZnSeAR-36

1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed

PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λ_opt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification

Download datasheet

See related files

Features

High responsivity in wide spectral range from 1.0 to 14.0 µm

Three-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

Large dynamic range

Excellent long term stability and reliability

Quantity discounted price

Fast delivery

Applications

FTIR spectroscopy and spectrometry

Specification (T_amb = 20°C)

Parameter	Value
Active element material	epitaxial HgCdTe heterostructure
Cut-on wavelength λ_cut-on (10%), µm	≤ 2.0
Peak wavelength λ_peak, µm	10.0 ± 0.2
Optimum wavelength λ_opt, µm	12.0
Cut-off wavelength λ_cut-off (10%), µm	14.0 ± 0.2
*Detectivity D (λ_peak, 20 kHz), cm⋅Hz^1/2/W**	≥ 1.6×10⁹
*Detectivity D (λ_opt, 20 kHz), cm⋅Hz^1/2/W**	≥ 9.0×10⁸
Current responsivity R_i (λ_peak), A/W	≥ 0.11
Current responsivity R_i (λ_opt), A/W	≥ 0.07
Time constant τ, ns	≤ 5
Resistance R, Ω	≤ 300
Bias voltage V_b, V	≤ 1.8
1/f noise corner frequency f_c, Hz	≤ 20
Active element temperature T_chip, K	~210
Optical area A_O, mm×mm	1×1
Package	TO8
Acceptance angle, Φ	~36°
Window	wZnSeAR