home-icon/Products / Infrared detectors / HgCdTe (MCT) Photoconductive / PCI-3TE-12-1×1-TO8-wZnSeAR-36

HgCdTe (MCT) Photoconductive Detector


1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed

PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification


High responsivity in wide spectral range from 1.0 to 14.0 µm

Three-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

Large dynamic range

Excellent long term stability and reliability

Quantity discounted price

Fast delivery


FTIR spectroscopy and spectrometry

Specification (Tamb = 20°C)

Parameter Value
Active element material epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%), µm ≤ 2.0
Peak wavelength λpeak, µm 10.0 ± 0.2
Optimum wavelength λopt, µm 12.0
Cut-off wavelength λcut-off (10%), µm 14.0 ± 0.2
Detectivity D* (λpeak, 20 kHz), cm⋅Hz1/2/W ≥ 1.6×109
Detectivity D* (λopt, 20 kHz), cm⋅Hz1/2/W ≥ 9.0×108
Current responsivity Ripeak), A/W ≥ 0.11
Current responsivity Riopt), A/W ≥ 0.07
Time constant τ, ns ≤ 5
Resistance R, Ω ≤ 300
Bias voltage Vb, V ≤ 1.8
1/f noise corner frequency fc, Hz ≤ 20
Active element temperature Tchip, K ~210
Optical area AO, mm×mm 1×1
Package TO8
Acceptance angle, Φ ~36°
Window wZnSeAR

Spectral response (Tamb = 20°C)


Mechanical layout, mm


3TE-TO8 package


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Temperature sensor characteristics

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