HgCdTe (MCT) Photoconductive Detector
PCI-3TE-12-1×1-TO8-wZnSeAR-36
1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed
PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
See specification
Features
High responsivity in wide spectral range from 1.0 to 14.0 µm
Three-stage thermoelectrically cooled
Hyperhemiimmersion microlens technology applied
Large dynamic range
Excellent long term stability and reliability
Quantity discounted price
Fast delivery
Applications
FTIR spectroscopy and spectrometry
Specification (Tamb = 20°C)
Parameter | Value | |
Active element material | epitaxial HgCdTe heterostructure |
|
Cut-on wavelength λcut-on (10%), µm | ≤ 2.0 | |
Peak wavelength λpeak, µm | 10.0 ± 0.2 | |
Optimum wavelength λopt, µm | 12.0 |
|
Cut-off wavelength λcut-off (10%), µm | 14.0 ± 0.2 | |
Detectivity D* (λpeak, 20 kHz), cm⋅Hz1/2/W | ≥ 1.6×109 | |
Detectivity D* (λopt, 20 kHz), cm⋅Hz1/2/W | ≥ 9.0×108 | |
Current responsivity Ri (λpeak), A/W | ≥ 0.11 | |
Current responsivity Ri (λopt), A/W | ≥ 0.07 | |
Time constant τ, ns | ≤ 5 |
|
Resistance R, Ω | ≤ 300 | |
Bias voltage Vb, V | ≤ 1.8 | |
1/f noise corner frequency fc, Hz | ≤ 20 | |
Active element temperature Tchip, K | ~210 | |
Optical area AO, mm×mm | 1×1 |
|
Package | TO8 | |
Acceptance angle, Φ | ~36° | |
Window | wZnSeAR |
Spectral response (Tamb = 20°C)

Mechanical layout, mm

3TE-TO8 package
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Application notes
Temperature sensor characteristics
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