HgCdTe (MCT) Photoconductive Detector

PC-4TE-10.6

1.0 – 12.0 µm, three-stage thermoelectrically cooled

PC-4TE-10.6 is four-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 10.6 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification

Features

High performance in the 1.0 – 12.0 µm spectral range

Four-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

Active area from 50×50 µm^2 to 2×2 mm^2

Long lifetime and MTBF

Stability and reliability

1/f noise

Specification (Ta = 20°C)

Parameter
PC-4TE-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
≥5.0×108
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
≥3.5×108
Current responsivity-active area length product Riopt)·L, A·mm/W
≥0.03
Time constant τ, ns
≤30
1/f noise corner frequency fc, Hz
≤20k
Bias voltage-active area length ratio Vb/L, V/mm
≤3.0
Resistance R, Ω
≤400
Active element temperature Tdet, K
~195
Active area A, mm×mm
0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2
Package
TO8, TO66
Acceptance angle, Φ
~70°
Window
wZnSeAR

Spectral response (Ta = 20°C)

PC-4TE-10.6-1

Mechanical layout, mm

4TE-TO8-non-imm-1-1

4TE-TO8 package

4TE-TO66-non-imm-1-1

4TE-TO66 package

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