HgCdTe (MCT) Photoconductive DetectorPC-3TE-9
1.0 – 10.3 µm, three-stage thermoelectrically cooled
PC-3TE-9 is three-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 9.0 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
Features
High performance in the 1.0 – 10.3 µm spectral range
Three-stage thermoelectrically cooled
Hyperhemiimmersion microlens technology applied
Active area from 50×50 µm^2 to 2×2 mm^2
Long lifetime and MTBF
Stability and reliability
1/f noise
Specification (Ta = 20°C)
Parameter |
PC-3TE-9 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
9.0 |
|
Detectivity D*(λpeak, 20 kHz), cm ⋅Hz1/2/W |
≥1.5×109
|
|
|
Detectivity D*(λopt, 20 kHz), cm
⋅Hz1/2/W |
≥1.0×109
|
|
|
Current responsivity-active area length product Ri(λopt)·L, A·mm/W
|
≥0.075
|
|
|
Time constant τ, ns
|
≤60 |
|
|
1/f noise corner frequency fc, Hz
|
≤10k | |
|
Bias voltage-active area length ratio Vb/L, V/mm
|
≤2.0 | |
|
Resistance R, Ω
|
≤400 |
|
|
Active element temperature Tdet, K
|
~210 | |
|
Active area A, mm×mm
|
0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2 |
|
|
Package
|
TO8, TO66 | |
|
Acceptance angle, Φ
|
~70° | |
|
Window
|
wZnSeAR | |
Spectral response (Ta = 20°C)
Mechanical layout, mm
3TE-TO8 package
3TE-TO66 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifiers
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