HgCdTe (MCT) Photoconductive Detector

PC-2TE-12

1.0 – 13.9 µm, two-stage thermoelectrically cooled

PC-2TE-12 is two-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12.0 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification

Features

High performance in the 1.0 – 13.9 µm spectral range

Two-stage thermoelectrically cooled

Active area from 50×50 µm^2 to 2×2 mm^2

Long lifetime and MTBF

Stability and reliability

1/f noise

Specification (Ta = 20°C)

Parameter
PC-2TE-12
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
12.0
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
≥1.0×108
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
≥4.5×107
Current responsivity-active area length product Riopt)·L, A·mm/W
≥0.005
Time constant τ, ns
≤3
1/f noise corner frequency fc, Hz
≤20k
Bias voltage-active area length ratio Vb/L, V/mm
≤1.5
Resistance R, Ω
≤200
Active element temperature Tdet, K
~230
Active area A, mm×mm
0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2
Package
TO8, TO66
Acceptance angle, Φ
~70°
Window
wZnSeAR

Spectral response (Ta = 20°C)

PC-2TE-12-1

Mechanical layout, mm

2TE-TO8-non-imm-3-3

2TE-TO8 package

2TE-TO66-non-imm-2-3

2TE-TO66 package

form-close

Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.

download-icon

Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy

green-checkmark

Thank you!

This file has been sended to your e-mail.

Contact form

For more information, please contact us directly: