HgCdTe (MCT) Detection Module

MicroM-10.6

2.0 – 12.0 µm, DC – 10 MHz, with photovoltaic multiple junction detector

microM-10.6 is a micro-size IR detection module. Uncooled photovoltaic mutiple junction detector, based on HgCdTe heterostructure, is integrated with transimpedance, DC coupled preamplifier. It is easy to assembly in space limited measuring systems of LWIR applications.

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See specification

Features

Very small size

Convenient to use

Versatility

Sensitive to IR radiation polarisation

Cost effective OEM version available

Quantity discounted price

Fast delivery

Applications

Gas detection, monitoring and analysis

CO2 laser (10.6 µm) measurements

Laser power monitoring and control

Laser beam profiling and positioning

Laser calibration

Specification (Ta = 20°C)

Parameter
Typical value
Optical parameters
Cut-on wavelength λcut-on (10%) µm
≤2.0
Peak wavelength λpeak, µm
8.0±1.5
Optimum wavelength λopt, µm
10.6
Cut-off wavelength λcut-off (10%) µm
≥12.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥1.5×107
Detectivity D*(λopt), cm⋅Hz1/2/W
≥5.0×106
Output noise density vn(100 kHz), μV/Hz1/2
≤1
Electrical parameters
Voltage responsivity Rvpeak), V/W
≥1.2×102
Voltage responsivity Rvopt), V/W
≥5.0×101
Low cut-off frequency flo, Hz
DC
High cut-off frequency fhi, Hz ≥10M
Output impedance Rout, Ω 50
Output voltage swing Vout, V ±1  (RL = 50 Ω*))
Output voltage offset Voff, V
max ±20
Power supply voltage V sup, V
+9
Other information
Active element material
epitaxial HgCdTe heterostructure
Active area A, mm×mm
1×1
Window
none
Acceptance angle, Φ
~85°
Ambient operating temperature Ta, °C
10 to 30
Signal output plug
SMA
Power supply plug
03T-JWPF-VSLE-S (male)
Mounting hole
none
Fan
none
*) R – load resistance

Mechanical layout, mm

microM-10.6-1

Spectral response (Ta = 20°C)

microM-10.6

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Temperature sensor characteristics

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