Programmable IR detection module based on HgCdTe TE cooled optically immersed photovoltaic multi-junction detector
LabM-I-10.6
LabM-I-10.6 is a programmable IR detection module with optically immersed photovoltaic detector based on HgCdTe heterostructure, integrated with transimpedance preamplifier. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects. For proper operation programmable „smart” VIGO thermoelctric cooler controller PTCC-01 (sold separately) and Smart Manager Software (freeware) are required. LabM-I-10.6 module comes complete with PTCC-01 and Smart Manager Software is the best solution for prototyping and R&D stage in a variety of LWIR applications. This set provides flexible approach to different needs of system designers.
Features
Spectral range: 2.0 to 12.0 µm
Frequency bandwidth: DC to 100 MHz
High performance and reliability
DC offset compensation
Compatible with optical accessories
Versatility and flexibility
Quantity discounted price
Fast delivery
No minimum order quantity required
Applications
Gas detection, monitoring and analysis
CO2 laser (10.6 µm) measurements
Laser power monitoring and control
Laser beam profiling and positioning
Laser calibration
Semiconductor manufacturing
Glucose monitoring
Dentistry
Research and prototyping
Detection module configuration
|
Detector symbol
|
PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36 | |
|
Detector type
|
photovoltaic, multi-junction | |
| Active element material | epitaxial HgCdTe heterostrucure | |
| Optical area, AO | 1 mm × 1 mm | |
| Immersion | hyperhemisphere | |
| Cooling | 4TE | |
| Acceptance angle, Φ | ~36 deg. | |
| Window | wZnSeAR
(3 deg. wedged zinc selenide, anti-reflection coating) |
|
| Preamplifier symbol | PIP | |
| Preamplifier type | transimpedance, programmable | |
| Signal output socket | SMA | |
| Power supply and TEC control socket | LEMO ECG.0B.309.CLN | |
| Mounting hole | M4 | |
| Built-in fan | yes | |
| Built-in TEC controller | no | |
Specification
(Typ., Tamb = 20°C, Rload = 50 Ω, unless otherwise noted, default module settings)
|
Parameter
|
Value | |
|
Active element temperature, Tchip
|
~195 K | |
|
Cut-on wavelength, λcut-on (10%)
|
≤2.0 µm | |
|
Peak wavelength, λpeak
|
9.0 µm ± 1.0 µm | |
|
Optimum wavelength, λopt
|
10.6 µm |
|
|
Cut-off wavelength, λcut-off (10%)
|
≥12.0 µm | |
| Detectivity, D* (λpeak, f = 20 kHz) |
≥7.2×108 cm ⋅Hz1/2/W
|
|
|
Detectivity, D* (λopt, f = 20 kHz)
|
≥6.0×108 cm⋅Hz1/2/W
|
|
|
Output noise voltage density, vn (f = 10 MHz)
|
≤400 nV/Hz1/2
|
|
| Voltage responsivity, Rv (λpeak) |
≥2.4×103 V/W
|
|
|
Voltage responsivity, Rv (λopt)
|
≥2.0×103 V/W
|
|
|
Low cut-off frequency, flo-DC
|
0 Hz (DC coupling selected) |
|
|
Low cut-off frequency, flo-AC
|
10 Hz
(AC coupling selected) |
|
| High cut-off frequency, fhi-H | ≥100 MHz
(High bandwidth selected) |
|
| High cut-off frequency, fhi-M | 15 MHz
(Mid bandwidth selected) |
|
| High cut-off frequency, fhi-L | 1.5 MHz
(Low bandwidth selected) |
|
| Output impedance, Rout | 50 Ω | |
| Output voltage swing, Vout | ±1 V | |
|
Output voltage offset, Voff
|
max ±20 mV | |
Spectral response
(Typ., Tamb = 20°C)
Mechanical layout (Unit: mm)
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Application notes
Temperature sensor characteristics
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