home-icon/Products / Selected Line / Infrared Detections Modules / Programmable IR detection module based on HgCdTe TE cooled optically immersed photovoltaic multi-junction detector LabM-I-10.6

Programmable IR detection module based on HgCdTe TE cooled optically immersed photovoltaic multi-junction detectorLabM-I-10.6

LabM-I-10.6 is a programmable IR detection module with optically immersed photovoltaic detector based on HgCdTe heterostructure, integrated with transimpedance preamplifier. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects. For proper operation programmable „smart” VIGO thermoelctric cooler controller PTCC-01 (sold separately) and Smart Manager Software (freeware) are required. LabM-I-10.6 module comes complete with PTCC-01 and Smart Manager Software is the best solution for prototyping and R&D stage in a variety of LWIR applications. This set provides flexible approach to different needs of system designers.


Spectral range: 2.0 to 12.0 µm

Frequency bandwidth: DC to 100 MHz

High performance and reliability

DC offset compensation

Compatible with optical accessories

Versatility and flexibility

Quantity discounted price

Fast delivery

No minimum order quantity required


Gas detection, monitoring and analysis

CO2 laser (10.6 µm) measurements

Laser power monitoring and control

Laser beam profiling and positioning

Laser calibration

Semiconductor manufacturing

Glucose monitoring


Research and prototyping

Detection module configuration

Detector symbol
Detector type
photovoltaic, multi-junction
Active element material epitaxial HgCdTe heterostrucure
Optical area, AO 1 mm × 1 mm
Immersion hyperhemisphere
Cooling 4TE
Acceptance angle, Φ ~36 deg.
Window wZnSeAR

(3 deg. wedged zinc selenide, anti-reflection coating)

Preamplifier symbol PIP
Preamplifier type transimpedance, programmable
Signal output socket SMA
Power supply and TEC control socket LEMO ECG.0B.309.CLN
Mounting hole M4
Built-in fan yes
Built-in TEC controller no


(Typ., Tamb = 20°C, Rload = 50 Ω, unless otherwise noted, default module settings)

Active element temperature, Tchip
~195 K
Cut-on wavelength, λcut-on (10%) 
≤2.0 µm
Peak wavelength, λpeak
9.0 µm ± 1.0 µm
Optimum wavelength, λopt
10.6 µm
Cut-off wavelength, λcut-off (10%)
≥12.0 µm
Detectivity, D* (λpeak, f = 20 kHz)
≥7.2×108 cm ⋅Hz1/2/W
Detectivity, D* (λopt, f = 20 kHz)
≥6.0×108 cm⋅Hz1/2/W
Output noise voltage density, vn (f = 10 MHz)
≤400 nV/Hz1/2
Voltage responsivity, Rvpeak)
≥2.4×103 V/W
Voltage responsivity, Rvopt)
≥2.0×103 V/W
Low cut-off frequency, flo-DC
0 Hz
(DC coupling selected)
Low cut-off frequency, flo-AC
10 Hz

(AC coupling selected)

High cut-off frequency, fhi-H ≥100 MHz

(High bandwidth selected)

High cut-off frequency, fhi-M 15 MHz

(Mid bandwidth selected)

High cut-off frequency, fhi-L 1.5 MHz

(Low bandwidth selected)

Output impedance, Rout 50 Ω
Output voltage swing, Vout ±1 V
Output voltage offset, Voff
max ±20 mV

Spectral response

(Typ., Tamb = 20°C)

Mechanical layout

(Unit: mm)


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Application notes password-padlock

Temperature sensor characteristics

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